采用真空热压烧结方法,制备了性能优异的Si-Al电子封装材料.其热导率高于110 W·m-1·K～,热膨胀系数从5～10μm·K-1可调控,密度低于2.5 g·cm-3.真空热压方法通过外界压力来克服非润湿状态下的毛细阻力,达到硅颗粒均匀分布,铝相呈连续网络状包裹的理想复合形貌组织.在铝熔点以上温度点进行的液相烧结均满足封装性能要求,且热压时间短、压力低.实验结果表明:热膨胀系数主要由硅含量确定,一定的临界压力值则是影响材料组织及性能的关键参数.
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