快速退火(RTA)单晶硅片时,硅片内部会形成一种特殊的空位分布.空位的分布将决定后序两步退火(800℃,4h+1000℃,16h)后生成的洁净区宽度和氧沉淀密度.研究了N2气氛下,不同RTA恒温时间对洁净区形成和氧沉淀密度的影响.发现延长RTA恒温时间,会增加氧沉淀密度.使用原子探针显微镜(原子力显微镜)研究了RTA后表面形貌的变化.发现在N2气氛下RTA处理过的硅片,表面微粗糙度略有增加.
参考文献
| [1] | International Technology Roadmap for Semiconductors 2004 update:Front End Process[OL].http://public.itrs.net/ |
| [2] | Plummer James D.Silicon VLSI Technology Fundamentals,Practice Modeling[M].北京:电子工业出版社,2003:151. |
| [3] | 佘思明.半导体硅材料学[M].长沙:中南工业大学出版社,1992:516. |
| [4] | 杰克逊 K;屠海令;万群.半导体工艺[M].北京:中国科学技术出版社,1999:87. |
| [5] | 阙端麟.硅材料科学与技术[M].杭州:浙江大学出版社,2000:615. |
| [6] | Istravtov A A;Hieslmair H;Weber E R .Advanced Gettering Techniques in ULSI Technology[OL].http://www.mrs.org/publications/bulletin,2000. |
| [7] | Lee Gon-Sub;Park Jea-Gun .Proximity gettering process for 300 mm silicon wafers[J].Journal of Ceramic Processing Research,2004,5(03):215. |
| [8] | Lee Gon-Sub;Park Jea-Gun .Proximity gettering process for 300 mm silicon wafers[J].Journal of Ceramic Processing Research,2004,5(03):215. |
| [9] | Akatsuka M.;Okui M.;Sueoka K. .Effect of rapid thermal annealing on oxide precipitation behavior in silicon crystal[J].Nuclear Instruments and Methods in Physics Research, Section B. Beam Interactions with Materials and Atoms,2002(0):46-54. |
| [10] | Falster F;Voronkov V V .Intrinic point defects and their control in silicon crystal growth and wafer processing[OL].Http://www.mrs.org/publications/bulletin/,2000. |
| [11] | Falster R;Gambaro D;Olmo M et al.[Z].ECS PV98-13,1998. |
| [12] | Shoichi Mizuo;Hisayuki Higuchi .Anomalous diffusion of B and Pin silicon directly masked with Si3N4[J].Japanese Journal of Applied Physics,1982,21(02):281. |
| [13] | Giridhar R V;Rose K.Silicon Nitride Thin Insulating Films[M].the Electrochemical Society Pennington NJ,1983:312. |
| [14] | Falster R.;Voronkov VV. .The engineering of intrinsic point defects in silicon wafers and crystals[J].Materials Science & Engineering, B. Solid-State Materials for Advanced Technology,2000(1/3):87-94. |
| [15] | 王敬,屠海令,刘安生,张椿,周旗钢,朱悟新.硅片的直接键合[J].稀有金属,1998(05):380-384. |
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