利用非接触式光学轮廓仪研究了双面抛光过程中不同压力下300mm硅片表面形貌的变化,并通过Stribeck曲线进行了探讨.结果表明,双面抛光过程中机械作用的强度随着压力的变化而不同,从而影响抛光后的硅片表面形貌.当硅片表面与抛光垫之间的接触处于固-液混合接触区时,协调机械去除作用与化学腐蚀作用之间的关系,使之达到平衡,可以显著地降低硅片表面的微粗糙度和峰谷值.
参考文献
| [1] | Schmolkea R;Detersb R;Thiemeb P et al.On the impact of nanotopographyof silicon wafers on post-CMP oxide layers[J].Materials Science in Semiconductor Processing,2003,5:413. |
| [2] | Jea-Gun Park;Takeo Katoh;Ungyu Paik .Nanotopography impact in shallow-trench isolation chemical mechanical polishing ―analysis method and consumable dependence[J].Journal of Materials Research,2004(6):1783-1790. |
| [3] | Brian Lee;Duane S Boning;Winthrop Baylies.Mapping of Nanotopography Interactions with CMP[A].San Francisco CA,2002 |
| [4] | Laura Peters .Controlling Nanotopography to Increase SOI Yields[J].Semiconductor international,2003(3):36-0. |
| [5] | Yeau Reng Jeng;Pay Yau Huang;Pan Wen chueh .Tribological analysis of CMP with partical asperity contact[J].The journal of Electrichemical Society,2003,150(10):G630. |
| [6] | Lu J;Rogers C .Measurement of slurry film thickness and wafer drag during CMP[J].Journal of the Electrochemical Society,2004,151(04):G241. |
| [7] | Pietsch G J;Higashi G S;Chabal Y J .Chemomechanical polishing of silicon:Surface termination and mechanism of removal[J].Applied Physics Letters,1994,64(23):3115. |
| [8] | Mullany B;Byrne G .The effect of slurry viscosity on chemicalmechanical polishing of silicon wafes[J].Journal of Materials Processing Technology,2003,28:132. |
| [9] | Pietsch GJ.;Higashi GS.;Chabal YJ. .THE ATOMIC-SCALE REMOVAL MECHANISM DURING CHEMO-MECHANICAL POLISHING OF SI(100) AND SI(111)[J].Surface Science: A Journal Devoted to the Physics and Chemistry of Interfaces,1995(1):395-401. |
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