目前异质外延技术能够得到较高质量的氮化镓(GaN)薄膜,衬底普遍采用蓝宝石、碳化硅以及硅等.各种技术包括缓冲层、外延横向生长技术、悬挂外延技术等是目前最重要的制备氮化镓技术.氢化物气相外延(HVPE)是制备氮化镓衬底最有希望的方法之一.本文介绍了氮化镓材料的电学、光学性质及重要用途,总结了氮化镓体单晶及薄膜材料制备方法,描述了氢化物气相外延原理,分析了HVPE制备自支撑(FS)GaN衬底方法,综述了HVPE技术国内外研究进展.
参考文献
| [1] | Ruterana P;Albrecht M;Neugebauer J.Nitride Semiconduc-tots:Handbook on Materials and Devices[M].Weinheim:Wiley-VCH,2003:193. |
| [2] | Morgan Nasser N;Ye Zhizhen;Xu Yabou .Evaluation of GaN growth improvement techniques[J].Materials Science and Engineering,2002,B90:201. |
| [3] | Sugahara T;Sato H;Haom M .Direct evidence that dislocation are non-radiate recombination centers in GaN[J].Japanese Journal of Applied Physics,1998,37:398. |
| [4] | Grzegory I .High pressure growth of bulk GaN in solutions in gallium[J].Journal of Physics:Condensed Matter,2003,13:68. |
| [5] | Molnar R J;Gotz W;Romano L T .Growth of GaN by hydride vapor-phnse epitaxy[J].Journal of Crystal Growth,1997,178:147. |
| [6] | Yasan A;Mcelintock R;Mayes K .280 nm UV LEDs grown on HVPE GaN substrate[J].Opto-Electronics Review,2002,10(04):287. |
| [7] | 孟兆祥,于广辉,叶好华,雷本亮,李存才,齐鸣,李爱珍.水平HVPE反应器中气流动力学模拟与GaN生长[J].功能材料与器件学报,2003(04):469-472. |
| [8] | 修向前,张荣,李杰,卢佃清,毕朝霞,叶宇达,俞慧强,郑有炓.额外HCl和氮化对HVPE GaN生长的影响[J].半导体学报,2003(11):1171-1175. |
| [9] | Gu S L;Zhang R;Shi Y .The impact of initial growth and sub-strate nitridation on thick GaN growth on sapphire by hydride va-por phase epitaxy[J].Journal of Crystal Growth,2001,12(04):231. |
| [10] | Dama C E C;Grzegorczyka A P;Hagemona P R .The effect of HVPE reactor geometry on GaN growth rate-experiments versus simulations[J].Journal of Crystal Growth,2004,271:192. |
| [11] | Richtera E;Henniga C;Weyersa M .Reactor and growth pro-cess optimization for growth of thick GaN layers on sapphire sub-strates by HVPE[J].Journal of Crystal Growth,2005,277:6. |
| [12] | Safvi SA.;Horton MN.;Matyi R.;Kuech TF.;Perkins NR. .EFFECT OF REACTOR GEOMETRY AND GROWTH PARAMETERS ON THE UNIFORMITY AND MATERIAL PROPERTIES OF GAN/SAPPHIRE GROWN BY HYDRIDE VAPOR-PHASE EPITAXY[J].Journal of Crystal Growth,1997(3/4):233-240. |
| [13] | Uchida K.;Yano F.;Kouguchi M.;Tanaka T.;Minagawa S.;Watanabe A. .NITRIDATION PROCESS OF SAPPHIRE SUBSTRATE SURFACE AND ITS EFFECT ON THE GROWTH OF GAN[J].Journal of Applied Physics,1996(7):3487-3491. |
| [14] | Ueda T.;Spruytte S.;Lee H.;Yuri M.;Itoh K.;Baba T.;Harris JS.;Huang TF. .Vapor phase epitaxy growth of GaN on pulsed laser deposited ZnO buffer layer[J].Journal of Crystal Growth,1998(3/4):340-346. |
| [15] | Wang C;Chung H A;Seyboth M .Growth of gallium nitride by hydride vapor-phase epitaxy[J].Journal of Crystal Growth,2001,230:377. |
| [16] | Tavernier P R;Etzkorn E V;Wang Y .Two-step growth of high-quality GaN by hydride vapor-phase epitaxy[J].Applied Physics Letters,2000,77:12. |
| [17] | Kim H M;Kang T W .Comparison of HVPE GaN films and substrates grown on sapphire and on MOCVD GaN epi-layor[J].Materials Letters,2000,46:286. |
| [18] | Kensaku Motoki;Takuji Okahisa .Growth and characterization of freestanding CaN substrates[J].Journal of Crystal Growth,2002,212:237. |
| [19] | Yoshinao Kumagai;Hisashi Murakami;Hisashi Seki .Thick and high-quality GaN growth on GaAs(111)substrates for prep-aration of freestanding GaN[J].Journal of Crystal Growth,2002,246:215. |
| [20] | Xu X;Vaudo R P;Loria C .Fabrication of GaN wafer for dec-tronic and optical electronic devices[J].Journal of Crystal Growth,2002,246:223. |
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