使用感应熔炼法制备cu山合金,并尝试使用单辊甩带法制备连续均匀的cu-In合金薄带,利用XRD,SEM和EDs对制得的Cu-In合金进行表征.结果表明:cu-In合金凝固过程存在偏析现象,合金内部呈现出不连续的富cu区域和连续的富In区域,并且在富In区域中心部位存在着许多细小裂纹,单质In仅存在于裂纹周围.感应熔炼的cu-In合金具有Cu11In9和In混合物相结构,它为研究CulnSe2薄膜太阳电池提供了一种新材料;但使用单辊甩带法无法制备In含量为55%(摩尔分数)的连续均匀cu-In合金薄带.
参考文献
| [1] | Wagner S;Shay J L;Migliorato P P;Kasper H M .CuInSe2/CdS heterojunction photovoltaic detectors[J].Applied Physics Letters,1974,25(08):434. |
| [2] | Shaban HT;Mobarak M;Nassary MM .Characterization of CuInSe2 single crystal[J].Physica, B. Condensed Matter,2007(2):351-354. |
| [3] | Ward J S;Ramanathan K;Hasoon F S;Coutts T J,Keane J,Contreras M A,Moriarty T,Noufi R .A 21.5%efficient Cu (In,Ga)Se2 thin-film concentrator solar cell[J].Progress in Photovoltaics:Research and Appfications,2002,10(01):41. |
| [4] | Kemell M;Ritala M;Leskela M .Thin film deposition methods for CuinSe2 solar cells[J].Critical Reviews in Solid State and Materials Sciences,2005,30(01):1. |
| [5] | Basol B M .Low cost techniques for the preparation of Cu(In,Ga)(Se,S)2 absorber Layers[J].Thin Solid Films,2000,361:514. |
| [6] | Norsworthy G.;Halani A.;Kapur VK.;Roe R.;Basol BM. Matson R.;Leidholm CR. .CIS film growth by metallic ink coating and selenization[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,2000(2):127-134. |
| [7] | Naoki S;Noriyuki U;Kuniyoshi O;Hazime T,Yuutaro K,Mikio M .Method for production of copper indium diselenide[P].US 4940604,1990. |
| [8] | Daniel G;William S M .Copper-Indium Alloy[P].Us 1960740,1934. |
| [9] | Okamoto H .Cu-In(Copper-Indium)system[J].Journal of Phase Equifibfia,1994,15(02):202. |
| [10] | 方玲,张弓,庄大明,赵明,郑麒麟,丁晓峰,吴敏生.Cu-In膜成分偏析对CIS膜结构的影响[J].清华大学学报(自然科学版),2004(05):593-596. |
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