采用TFA-MOD法在LaAlO3基体上制备YBCO薄膜, 热处理温度为780～860 ℃.XRD结果表明, 热处理温度在780～820 ℃之间时, 随着热处理温度的提高, YBCO薄膜中BaF2逐渐减少, a轴生长的晶粒和杂质相减少, c轴生长的晶粒增加;热处理温度在820～860 ℃之间时, 随着热处理温度的升高, 薄膜中a轴生长的晶粒增加, c轴生长的晶粒减少;SEM分析发现, YBCO薄膜表面较平整, 无裂纹;超导性能测试结果表明, 热处理温度为820 ℃的YBCO薄膜的临界电流密度Jc可达1 MA·cm-2(77 K, 0 T).
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