各向异性磁电阻(AMR)薄膜材料被广泛应用于磁传感器和硬盘的读出磁头中.器件的小型化要求AMR薄膜材料必须做得很薄.采用磁控溅射的方法在玻璃基片上制备了Ta/NiFe/Ta磁电阻超薄薄膜,将几个纳米厚的Al2O3层插入Ta/NiFe/Ta薄膜的Ta/NiFe界面,研究该插层对超薄NiFe薄膜性能的影响.结果表明:由于Al2O3层的“镜面反射”作用,适当厚度和结构状态的Al2O3层可以提高薄膜的磁电阻值, 当NiFe薄膜厚度为5 nm时,通过在界面处插入约2nm的Al2O3层,薄膜的磁电阻值从0.65%提高到了0.80%,增加幅度超过20%.性能提高的主要原因是除纳米Al2O3插层的“镜面反射”作用外, 抑制Ta/NiFe的界面反应以及减少Ta层分流也是重要的影响因素.
参考文献
| [1] | Fitzsimmons MR;Silva TJ;Crawford TM .Surface oxidation of Permalloy thin films[J].Physical review, B. Condensed matter and materials physics,2006(1):4420-1-4420-7-0. |
| [2] | G. H. Yu;H. C. Zhao;M. H. Li;F. W. Zhu;W. Y. Lai .Interface reaction of Ta/Ni_(81)Fe_(19) or Ni_(81)Fe_(19)/Ta and its suppression[J].Applied physics letters,2002(3):455-457. |
| [3] | Li K B;Wu Y H;Han G C;Qiu J J Zheng Y K Guo Z B An L H Luo P .Electrical and magnetic properties of nano-oxide added spin valves[J].Thin Solid Films,2006,505(1-2):22. |
| [4] | Fukuzawa H;Yuasa H;Hashimoto S;Iwasaki H;Tanaka Y .Large magnetoresistance ratio of 10% by Fe50Co50 layers for current-confined-path current-perpendicular-to-plane giant magnetoresistance spin-valve films[J].Applied physics letters,2005(8):2507-1-2507-3-0. |
| [5] | 沈峰,徐庆宇,卢正启,蔡建旺,赖武彦,张泽.一种非连续纳米氧化层自旋阀的显微结构研究[J].物理学报,2002(08):1851-1855. |
| [6] | A. Veloso;P. P. Freitas;P. Wei .Magnetoresistance enhancement in specular, bottom-pinned, Mn_(83)Ir_(17) spin valves with nano-oxide layers[J].Applied physics letters,2000(7):1020-1022. |
| [7] | Jongill Hong;Youngjun Lee;Min Kyu Lee;Ha Jin Song;Hyun-Joon Shin;Yonggoo Yoo;Jeongdae Suh .Chemical states of Co and Fe in a specularly reflective oxide layer in spin valves[J].Applied physics letters,2003(23):4803-4805. |
| [8] | Lin T;Mauri D .Effect s of oxide seedand caplayers on magnetic properties of a synthetic spin valve[J].Applied Physics Letters,2001,78(15):2181. |
| [9] | Gillies MF.;Leibbrandt GWR.;Kuiper AET. .Effect of thin oxide layers incorporated in spin valve structures[J].Journal of Applied Physics,2001(11 Pt.2):6922-6924. |
| [10] | L. Wang;J. J. Qiu;W. J. McMahon;K. B. Li;Y. H. Wu .Nano-oxide-layer insertion and specular effects in spin valves: Experiment and theory[J].Physical review, B. Condensed matter and materials physics,2004(21):214402.1-214402.14. |
| [11] | 张燕红.纳米材料的巨磁电阻效应及其应用[J].稀有金属,2001(06):459-463. |
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