采用直拉法生长普通和掺氮硅单晶,研究不同含氮浓度的晶体中氧化诱生层错(OSF)的行为.从4组晶体的相同位置取样,并对样品进行1100℃湿氧氧化实验.实验结果表明,随着晶体中氮浓度的增加样品中氧化诱生层错环(OSF-ring)宽度变大,且环内OSF缺陷的密度增加.这说明,氮的掺入促进了晶体中满足OSF形核要求的原生氧沉淀的形成,使OSF形核区变大.
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