磁控溅射中高沉积速率有利于获得高纯度薄膜,节省镀膜时间;高沉积效率的靶材可制备出更多数月的晶圆.通过建立平面靶的溅射模型研究了Al-Cu合金靶的品粒取向和品粒尺寸对溅射速率、沉积速率和沉积效率的影响.实验结果显示,溅射速率与靶材的原子密排度成正比关系,靶材的原子密排度受品粒取向和晶粒尺寸的影响,有特定的变化范围,因此溅射速率也只在一个范围内变化.沉积速率和沉积效率受靶材表面窄间内原子密排方向分布的影响,原子密排方向分布则由靶材的晶粒取向和晶粒尺寸决定.
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