以Y36°钽酸锂(LiTaO3,LT)晶片为研究对象,通过对同成分LT晶片(CLT)和深度还原黑色u'晶片(BLT)的比较研究,探讨了表面还原处理对钽酸锂晶片电学性能的影响.X射线衍射研究显示,还原处理对晶体结构没有明显影响.BLT的电导率比CLT明显高4个数量级,达到7.7×10-12 Ω-1·cm-1,其压电常数d33、居里温度和介电常数与CLT相差不大,介电损耗有所提高.研究结果表明,还原处理不改变晶体结构,但能提高晶片表面的电导率,从而改善和消除晶片在器件制备过程中因热释电效应引起的放电现象.
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