研究了在电化学原子氢作用下绝缘NiZnCu铁氧体陶瓷的电阻和介电性能变化,并研究了电化学原子氢处理所用阴极电流密度(30～120 A·m-2)和温度(20～60℃)对氢致半导化的影响.研究结果表明,在原子氢处理初期,绝缘NiZnCu铁氧体陶瓷电阻率急剧下降,出现半导化,然后随处理时间延长而下降减缓,并逐渐趋稳;介电常数随原子氢处理时间延长而逐渐增加,达到一个极大值后,又出现下降.电流密度与温度对铁氧体半导化的速率和程度的影响没有简单的单向关系.在120 A·m-2,40℃下进行原子氢处理时,铁氧体电阻率降低最快,在2 min内从8.29×108Ω·m下降到1.32Ω·in,下降了近9个数量级,且电阻率下降趋稳后的取值最小.从氢致NiZnCu铁氧体陶瓷半导化的过程,即吸附-侵入-扩散理论解释了温度以及电流密度对半导化的影响.并从电化学原子氢对铁氧体的掺杂和化学反应作用,对NiZnCu铁氧体绝缘陶瓷电阻和介电性能的变化进行了探讨.
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