用射频磁控溅射氧化锌掺铝陶瓷靶的方法在玻璃衬底上制备了ZnO:Al薄膜.研究了衬底温度(Ts)、靶基距(Dt-s)对薄膜结构及光电性能的影响.实验结果显示:Ts在室温至300℃、Dt-s在35～60mm范围内时,薄膜为六方相结构,并具有C轴取向,可见光范围平均透光率大于88%.Ts及Dt-s对薄膜电学性能的影响相似,随Ts升高或Dt-s增大,ZnO:Al薄膜的电阻率先减小后增大,霍尔迁移率先增大后减小,载流子浓度逐渐减小.在Ts为150℃,Dt-s为40 mm时,可获得最低电阻率4.18×10-4 Ω·cm的ZnO:Al薄膜,其载流子浓度为8.13×1020 cm-3、霍尔迁移率为18 cm2·V-1·s-1,可见光范围平均透过率为89%.
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