The component of the surface and profile of AlN films have beeninvestigated using X-ray photoelectron spectrometry(XPS). The results show that the surface of the films was composed by Al, N, O and C elements. C and O contaminations are attributed both to the sputtering chamber venting and to exposure of the films to air. According XPS depth profile analysis, it is found that the composition of the film along the growth axis is nearly uniform, and Al/N ratio is close to that in the AlN stoichiometry. Beneath the surface, the amount of O in the film is found below 5%.
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