应用化学, 2009, 26(11): 1349-1352. doi: 10.3969/j.issn.1000-0518.2009.11.022
基于银纳米粒子的生成测定痕量甲醛
龙云飞 1, , 周立萍 2, , 韩明 {"currentpage":1,"firstResult":0,"maxresult":10,"pagecode":5,"pageindex":{"endPagecode":5,"startPagecode":1},"records":[{"abstractinfo":"从电介质的击穿机理出发,用数学方法描述了电极注入电荷被介质捕获的全过程,详细分析了电介质的击穿特性并得出了电击穿现象的理论公式,通过同成分铌酸锂晶体和掺锌铌酸锂晶体的极化和击穿实验对理论分析的结果进行了验证,试验现象与理论分析吻合较好.","authors":[{"authorName":"韦伟","id":"77637484-48dd-45b9-b043-5e32a9e87b49","originalAuthorName":"韦伟"},{"authorName":"于建","id":"95a5021b-3a09-425e-8c66-e79e374d6c33","originalAuthorName":"于建"},{"authorName":"纪磊","id":"3a9b8223-94fb-4a43-a291-d1569d86725b","originalAuthorName":"纪磊"},{"authorName":"倪文俊","id":"2262e901-ab90-426f-a3de-f523160d6b2e","originalAuthorName":"倪文俊"},{"authorName":"桑梅","id":"d9f742b8-02ca-4643-984f-30f902599682","originalAuthorName":"桑梅"},{"authorName":"任铁雄","id":"b335c791-659e-47bd-870f-8359d34a55b7","originalAuthorName":"任铁雄"},{"authorName":"李世忱","id":"8cc25c9c-c642-4202-b165-8da9406625b1","originalAuthorName":"李世忱"}],"doi":"10.3969/j.issn.1000-985X.2005.04.014","fpage":"628","id":"be4c539c-6fef-4187-9ecf-67a71c88ed6a","issue":"4","journal":{"abbrevTitle":"RGJTXB","coverImgSrc":"journal/img/cover/RGJTXB.jpg","id":"57","issnPpub":"1000-985X","publisherId":"RGJTXB","title":"人工晶体学报"},"keywords":[{"id":"ac1bbf83-69c5-41f6-9322-dab9ee374ee4","keyword":"准相位匹配","originalKeyword":"准相位匹配"},{"id":"4db1b7c5-69e1-44de-9993-3fadf5c372ef","keyword":"铌酸锂晶体","originalKeyword":"铌酸锂晶体"},{"id":"852baef5-89f0-4dfa-8e26-1d2dcc5b3db2","keyword":"外加电场极化","originalKeyword":"外加电场极化"},{"id":"d53f70db-687f-423c-8b7d-9dcbe9f77059","keyword":"电击穿","originalKeyword":"电击穿"},{"id":"0f33feed-44e6-44ef-a11e-a45a3af3e024","keyword":"电介质","originalKeyword":"电介质"}],"language":"zh","publisherId":"rgjtxb98200504014","title":"铌酸锂晶体电击穿特性的研究","volume":"34","year":"2005"},{"abstractinfo":"微弧氧化技术是近年来在国内兴起的铝及其合金的新型阳极氧化技术.通常,微弧氧化是在阳极氧化膜被电击穿的基础上进行,电击穿理论的研究有利于表面处理新技术的开发及微弧氧化机理的探讨.在此总结了几十年来电击穿理论的研究成果,并对各种理论假设和模型进行了评价.","authors":[{"authorName":"旷亚非","id":"16222f60-57ec-4df2-80f0-8e3351abb8a6","originalAuthorName":"旷亚非"},{"authorName":"侯朝辉","id":"e7ba36f5-a202-43e0-bd05-6106052c92bd","originalAuthorName":"侯朝辉"},{"authorName":"刘建平","id":"b790ee22-5491-4195-bb9a-a4e9d4e9e47e","originalAuthorName":"刘建平"}],"doi":"10.3969/j.issn.1004-227X.2000.03.012","fpage":"38","id":"b3cbef6e-bab7-4a8b-8628-0e37bf1c6f9f","issue":"3","journal":{"abbrevTitle":"DDYTS","coverImgSrc":"journal/img/cover/DDYTS.jpg","id":"21","issnPpub":"1004-227X","publisherId":"DDYTS","title":"电镀与涂饰 "},"keywords":[{"id":"9cfb77e9-cf84-448a-a8dc-64a53417a6c1","keyword":"阳极氧化","originalKeyword":"阳极氧化"},{"id":"7f87cab4-bc41-4de4-891f-4b92a34808b8","keyword":"电击穿","originalKeyword":"电击穿"},{"id":"94939d7c-ff11-42e1-ad93-89e2a51f6145","keyword":"微弧氧化","originalKeyword":"微弧氧化"}],"language":"zh","publisherId":"ddyts200003012","title":"阳极氧化过程中电击穿理论的研究进展","volume":"19","year":"2000"},{"abstractinfo":"在真空电炉中利用机械合金化和热压烧结法制备出纳米晶块体钨铜合金.在进行电击穿实验时,电弧在其表面出现了分散现象,明显不同于相应传统材料电弧集中在局部的现象.这是由于纳米材料在电击穿时由于较低的逸出功、大量晶界的存在和纳米尺度的粒子能窄化钨铜界面的势垒而诱发大量电子发射所致.","authors":[{"authorName":"陈文革","id":"0a13e3b9-f0fe-4099-81a9-7c819bc4953b","originalAuthorName":"陈文革"},{"authorName":"邢力谦","id":"442274f4-d9eb-402c-b7e9-1c82dc08924c","originalAuthorName":"邢力谦"},{"authorName":"李金山","id":"9be8337d-99e3-4dfc-822c-a8d116bdbd24","originalAuthorName":"李金山"}],"doi":"","fpage":"463","id":"5726bbce-5349-4d06-91db-97112dc64b9f","issue":"3","journal":{"abbrevTitle":"XYJSCLYGC","coverImgSrc":"journal/img/cover/XYJSCLYGC.jpg","id":"69","issnPpub":"1002-185X","publisherId":"XYJSCLYGC","title":"稀有金属材料与工程"},"keywords":[{"id":"38aab1cc-9bee-4808-b6fb-19ff8092a0ea","keyword":"电击穿","originalKeyword":"电击穿"},{"id":"0dd3ca32-1a12-4694-a7e4-92a6d741e58d","keyword":"钨铜合金","originalKeyword":"钨铜合金"},{"id":"2d8dec97-31d3-4b46-a18b-505fde96aa07","keyword":"纳米材料","originalKeyword":"纳米材料"},{"id":"477418e8-720a-495a-aaed-f45d405ad4bb","keyword":"电子发射","originalKeyword":"电子发射"}],"language":"zh","publisherId":"xyjsclygc200703022","title":"纳米晶钨铜合金表面上不寻常的电弧分布及电击穿机理","volume":"36","year":"2007"},{"abstractinfo":"对加入不同含量稀土元素(RE)的铜-铬触头材料在10 Pa真空条件下的电击穿性能进行了研究;通过对比不同稀土元素含量铜-铬触头材料的显微组织和电击穿前后硬度值的变化,分析了铜-铬触头材料的击穿机理.结果表明:稀土元素的加入能显著细化晶粒,并能提高材料的耐电压强度,加入质量分数为0.20%RE比加入0.06%RE更能细化铜-铬合金晶粒,其耐电压强度和硬度的提高也更明显;稀土元素的加入有利于电孤的熄灭.","authors":[{"authorName":"李晓燕","id":"b0d766b4-da01-4e5a-95d5-1c7d20388dc3","originalAuthorName":"李晓燕"},{"authorName":"王顺兴","id":"963dafe7-bf58-4f26-99a4-40d86a76516c","originalAuthorName":"王顺兴"},{"authorName":"田保红","id":"783a93e1-6e34-4c3e-8ca2-35740b8cd7bc","originalAuthorName":"田保红"}],"doi":"","fpage":"69","id":"c652724e-954c-455f-9360-a14d89fd8922","issue":"11","journal":{"abbrevTitle":"JXGCCL","coverImgSrc":"journal/img/cover/JXGCCL.jpg","id":"45","issnPpub":"1000-3738","publisherId":"JXGCCL","title":"机械工程材料"},"keywords":[{"id":"3b76af00-afd9-41c4-8877-30f2a5ba4ac1","keyword":"铜一铬合金","originalKeyword":"铜一铬合金"},{"id":"a44e1bcc-f987-48a8-9b04-cc83d21b4369","keyword":"稀土","originalKeyword":"稀土"},{"id":"66b35161-38d6-4109-a643-5df88c9bdd90","keyword":"电击穿","originalKeyword":"电击穿"}],"language":"zh","publisherId":"jxgccl200811019","title":"稀土元素对铜-铬触头材料显微组织和电击穿性能的影响","volume":"32","year":"2008"},{"abstractinfo":"采用大气等离子喷涂技术在铜基体上沉积了Al2O3涂层.采用XRD和SEM对涂层微观结构进行了表征.通过探讨孔隙率和吸潮行为对绝缘性能的影响,分析了等离子喷涂Al2O3涂层结构与电绝缘失效机理的关系.结果表明:等离子喷涂Al2O3涂层较致密,界面结合较好.随涂层厚度不同其孔隙率在5％～7％范围变化.等离子喷涂Al2O3涂层结构中的孔洞是电绝缘失效的主要部位且呈典型电晕击穿形貌.电晕击穿诱发的裂纹沿击穿方向扩展形成击穿隧道.击穿方向与电极极性无关而由击穿孔洞位置决定.涂层厚度与涂层击穿强度呈现倒数关系.吸潮会诱发导电通路形成降低Al2O3涂层抗击穿能力.","authors":[{"authorName":"郭瑞","id":"799295bf-bc7d-423d-b3e8-676eef103352","originalAuthorName":"郭瑞"},{"authorName":"梁波","id":"35a767f2-e266-49a5-95bf-0a3c42800554","originalAuthorName":"梁波"},{"authorName":"赵晓兵","id":"02351efe-7668-4b07-94b3-56e7a7283f4b","originalAuthorName":"赵晓兵"},{"authorName":"杨英春","id":"ee84ac77-039b-45ec-b821-c0b042335037","originalAuthorName":"杨英春"},{"authorName":"季珩","id":"989022f0-6a28-49ad-8127-298336ed3a08","originalAuthorName":"季珩"},{"authorName":"郑学斌","id":"c9831f6d-0a0c-4db5-b4b1-c76f5e31bf34","originalAuthorName":"郑学斌"}],"doi":"10.11868/j.issn.1005-5053.2014.5.007","fpage":"43","id":"e4fb2a59-2a31-4d28-aacb-9da2484b72ab","issue":"5","journal":{"abbrevTitle":"HKCLXB","coverImgSrc":"journal/img/cover/HKCLXB.jpg","id":"41","issnPpub":"1005-5053","publisherId":"HKCLXB","title":"航空材料学报"},"keywords":[{"id":"ed93b837-0cf7-4666-b0d2-6cbb2bd0ac5f","keyword":"等离子喷涂","originalKeyword":"等离子喷涂"},{"id":"07eec229-5e3b-484f-97a6-fe8bcfb1db9d","keyword":"Al2O3涂层","originalKeyword":"Al2O3涂层"},{"id":"23959e9e-fd85-4452-bd19-5c1ea81b1314","keyword":"电击穿","originalKeyword":"电击穿"}],"language":"zh","publisherId":"hkclxb201405007","title":"等离子喷涂Al2O3涂层的电击穿机理","volume":"34","year":"2014"},{"abstractinfo":"采用射频磁控反应溅射法在单晶硅片上制备了氧化硅(SiOx)薄膜,分析了薄膜的主要成分,研究了制备工艺对薄膜表面形貌和电击穿场强的影响.结果表明:薄膜的主要成分为氧化硅(SiOx);退火前后,薄膜的表面粗糙度由原来的1.058nm下降至0.785nm,峰与谷之间的高度差由原来的7.414nm降低至5.046nm;薄膜的电击穿场强随溅射功率的增加先增大后减小,通过800℃/100 s的快速热退火,在各种射频功率下制备的薄膜电击穿场强都有明显升高.薄膜的绝缘性能显著增强.","authors":[{"authorName":"金桂","id":"854bab08-f175-4c12-ac09-eadd281d0e0d","originalAuthorName":"金桂"},{"authorName":"蒋纯志","id":"2436d1a6-bb4f-4611-8ceb-15d70dd93f8c","originalAuthorName":"蒋纯志"},{"authorName":"邓海明","id":"54ba5fa7-0a7a-4468-8e6e-48a2e03d303f","originalAuthorName":"邓海明"}],"doi":"10.3969/j.issn.1009-9239.2009.03.005","fpage":"20","id":"2da81e60-388e-4395-a32e-eaf52c3ce345","issue":"3","journal":{"abbrevTitle":"JYCL","coverImgSrc":"journal/img/cover/JYCL.jpg","id":"50","issnPpub":"1009-9239","publisherId":"JYCL","title":"绝缘材料"},"keywords":[{"id":"7b913652-14ec-42ca-a909-27978f850868","keyword":"射频磁控反应溅射","originalKeyword":"射频磁控反应溅射"},{"id":"815f24d5-b388-4a76-a5bb-441a5e32004f","keyword":"表面形貌","originalKeyword":"表面形貌"},{"id":"a8af794e-6469-4d76-b03d-b7232a6d5a15","keyword":"电击穿场强","originalKeyword":"电击穿场强"}],"language":"zh","publisherId":"jycltx200903005","title":"射频磁控反应溅射氧化硅薄膜微结构和电击穿场强研究","volume":"42","year":"2009"},{"abstractinfo":"通过大量实验,对不同Sr/Ba比制作的SBBT高压陶瓷电容器的击穿特性进行了研究,指出瓷体中的局部还原现象是造成电容器瓷片击穿场强严重下降的原因所在.经过理论分析,提出施主离子Bi3+在固溶体中的不均匀分布导致瓷体还原的新观点.在此基础上,通过加入受主离子Mg2+克服了还原现象,使电容器的击穿场强大幅度提高.","authors":[{"authorName":"刘斌","id":"70ce5f4a-9044-4d12-a6c9-eb1026f7418f","originalAuthorName":"刘斌"},{"authorName":"王德生","id":"0f06206f-cc5a-4851-93ef-023616a55b40","originalAuthorName":"王德生"},{"authorName":"陈维","id":"8234c678-948f-45db-9119-9ef3211b7bf8","originalAuthorName":"陈维"},{"authorName":"陈寿田","id":"d646aab8-5f16-42d5-9370-6c7b4c3164a8","originalAuthorName":"陈寿田"}],"doi":"","fpage":"480","id":"37eefd05-0b59-4847-bcb8-38291f229ff1","issue":"6","journal":{"abbrevTitle":"XYJSCLYGC","coverImgSrc":"journal/img/cover/XYJSCLYGC.jpg","id":"69","issnPpub":"1002-185X","publisherId":"XYJSCLYGC","title":"稀有金属材料与工程"},"keywords":[{"id":"d1863d43-b241-49c5-a64e-d766139aa575","keyword":"SBBT","originalKeyword":"SBBT"},{"id":"4fcef356-f868-44bd-ba5d-6d2959233bff","keyword":"还原","originalKeyword":"还原"},{"id":"853a501f-8aa0-4c97-8840-486a6ad0dd16","keyword":"击穿","originalKeyword":"击穿"},{"id":"7e97b8c2-5c5f-47b6-9803-52274d3ea622","keyword":"互扩散","originalKeyword":"互扩散"}],"language":"zh","publisherId":"xyjsclygc200206020","title":"Ba2+浓度对SBBT高压陶瓷电容器电击穿特性的影响","volume":"31","year":"2002"},{"abstractinfo":"测定了大块非晶合金Zr55Cu30Al10Ni5晶化前后的费米能级和各元素的电子结合能,研究了非晶合金的电子结构特征和电击穿行为.测试并讨论了非晶材料场发射能力和耐电压强度的关系.结果表明,对于Zr基合金,非晶态比晶态合金具有更大的功函数.比较了Zr55Cu30Al10Ni5合金非晶态与晶态的耐电压强度数值,发现非晶态合金的耐电压强度数值比较分散,晶化合金的耐电压强度相对比较集中.耐电压强度平均值表明,Zr基合金非晶态具有更好的耐电压能力.","authors":[{"authorName":"曹峻松","id":"ff645b0d-ee42-469e-9b07-4f709c3037d3","originalAuthorName":"曹峻松"},{"authorName":"王亚平","id":"5cd43b70-20ea-421f-94ef-6923923b86e4","originalAuthorName":"王亚平"},{"authorName":"孙军","id":"4145e7b1-4901-48a2-8f4a-ab6a09ac600e","originalAuthorName":"孙军"}],"doi":"10.3321/j.issn:1005-3093.2006.02.005","fpage":"136","id":"5caec1a7-773a-44e1-a6f8-c21079b3ba2f","issue":"2","journal":{"abbrevTitle":"CLYJXB","coverImgSrc":"journal/img/cover/CLYJXB.jpg","id":"16","issnPpub":"1005-3093","publisherId":"CLYJXB","title":"材料研究学报"},"keywords":[{"id":"11c5e181-c498-42d8-8854-f3537e561be6","keyword":"金属材料","originalKeyword":"金属材料"},{"id":"a0d31b7b-2e52-4633-95c5-d888a306f8e7","keyword":"功函数","originalKeyword":"功函数"},{"id":"ab6e90f0-cf26-49d7-a964-d7aecc21081d","keyword":"场制发射","originalKeyword":"场制发射"},{"id":"e8f4f7ba-b864-49b9-8005-8ca46faa3c65","keyword":"击穿","originalKeyword":"击穿"},{"id":"26f9f70f-07d1-4db6-86b1-e6e0789034c6","keyword":"费米能级","originalKeyword":"费米能级"}],"language":"zh","publisherId":"clyjxb200602005","title":"大块非晶合金Zr55Cu30Al10Ni5的电子结构特征及电击穿行为","volume":"20","year":"2006"},{"abstractinfo":"通过在聚酰亚胺基体中引入一定量 MMT片层,可以改善薄膜的耐电老化性能,对薄膜电老化前后表面形貌及化学组成的研究结果表明: MMT片层均匀而充分的分散提高了 MMT/PI薄膜的耐电弧性 , 这是聚酰亚胺薄膜电老化性能改善的原因.","authors":[{"authorName":"王德生","id":"e125016c-2000-4850-bab7-1bf161676d5e","originalAuthorName":"王德生"},{"authorName":"吴俊涛","id":"1c13da1b-447d-46ad-9e6a-7fd9a939723e","originalAuthorName":"吴俊涛"},{"authorName":"胡爱军","id":"3b97d24b-fcdf-41b5-9cc3-7326fd8571f4","originalAuthorName":"胡爱军"},{"authorName":"范琳","id":"5076614a-531d-4775-954d-9076784ce81c","originalAuthorName":"范琳"},{"authorName":"杨士勇","id":"9bf547d3-4ca9-4726-a3e6-cd065e1a9479","originalAuthorName":"杨士勇"}],"doi":"10.3969/j.issn.1009-9239.2005.05.009","fpage":"31","id":"3c2d2839-d74b-4814-914c-c981883323f0","issue":"5","journal":{"abbrevTitle":"JYCL","coverImgSrc":"journal/img/cover/JYCL.jpg","id":"50","issnPpub":"1009-9239","publisherId":"JYCL","title":"绝缘材料"},"keywords":[{"id":"b2b4a5ce-1fac-4a3e-8963-336926a59f6d","keyword":"聚酰亚胺","originalKeyword":"聚酰亚胺"},{"id":"17f2f860-aebd-42ff-a9d5-bdbfde5f1d54","keyword":"薄膜","originalKeyword":"薄膜"},{"id":"53996818-f19b-4048-bfd9-3a297d52d7fe","keyword":"MMT","originalKeyword":"MMT"},{"id":"8d7efc30-1d2e-4a24-8ef8-278fab38fd85","keyword":"击穿破坏","originalKeyword":"击穿破坏"}],"language":"zh","publisherId":"jycltx200505009","title":"蒙脱土/聚酰亚胺复合薄膜的电击穿破坏特性","volume":"38","year":"2005"},{"abstractinfo":"介绍了 77K下薄膜状绝缘材料电气强度的测试方法,研究了聚酰亚胺 /蒙脱土、聚酰亚胺 /云母、聚酰亚胺 /SiO2 三个系列的低温电气强度.结果表明:前两个系列填料对电气强度的影响趋势相同,均存在最佳填料含量,聚酰亚胺 /蒙脱土电气强度最佳可达 215.77MV/m;对于聚酰亚胺 /SiO2系列,电气强度比纯 PI薄膜略有下降,且含量较高时下降明显,但仍然可以满足应用的要求.","authors":[{"authorName":"李元庆","id":"e66cd2fa-f7d5-4f38-ac9a-8605f9ed2be4","originalAuthorName":"李元庆"},{"authorName":"付绍云","id":"87fde2a1-6962-43dd-be8a-6fbddb5c146d","originalAuthorName":"付绍云"}],"doi":"10.3969/j.issn.1009-9239.2005.05.008","fpage":"27","id":"1ee227fa-e7ea-445b-974d-533d67cd49d4","issue":"5","journal":{"abbrevTitle":"JYCL","coverImgSrc":"journal/img/cover/JYCL.jpg","id":"50","issnPpub":"1009-9239","publisherId":"JYCL","title":"绝缘材料"},"keywords":[{"id":"f381d729-3c28-457c-8f2e-9b25b4c6207a","keyword":"纳米杂化材料","originalKeyword":"纳米杂化材料"},{"id":"88fb4e38-86cf-4a73-be47-7b6a338baefc","keyword":"聚酰亚胺","originalKeyword":"聚酰亚胺"},{"id":"f8aa49e4-62ef-4571-9585-ac2f08b819bd","keyword":"蒙脱土","originalKeyword":"蒙脱土"},{"id":"e654ded8-f173-43e2-bc11-a90b1cf44bf7","keyword":"聚酰亚胺","originalKeyword":"聚酰亚胺"},{"id":"2a6d321e-9262-482f-84d5-ff9c1357e4e6","keyword":"云母","originalKeyword":"云母"},{"id":"3ecc4076-9ca3-452e-87ff-4dfc7def466b","keyword":"氧化硅","originalKeyword":"氧化硅"},{"id":"4d3b5e58-ee0d-4825-9d8c-7097a2e415c4","keyword":"低温电气强度","originalKeyword":"低温电气强度"}],"language":"zh","publisherId":"jycltx200505008","title":"聚酰亚胺纳米杂化薄膜绝缘材料77K下的电击穿性能研究","volume":"38","year":"2005"}],"totalpage":48,"totalrecord":472}