利用超薄的SiO2做缓冲层,用脉冲激光沉积法在Si(100)上制备了具有良好铁电性的高度(100)取向的PZT薄膜.通过对不同条件下在SiO2/Si(100)上生长的PZT薄膜的研究,分析了SiO2厚度、沉积温度、退火时间对PZT性能的影响.
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