基于Ag基Bi-2223相(Bi-2223/Ag)复合带材中晶面取向对提高临界电流密度等实际应用方面的重要性,我们在带材临界电流密度测量的基础上,由金兹玻-朗道(GL)理论计算出沿ab平面和c轴方向的上临界磁场Hc2(H∥ab)和Hc2(H∥c),其比值强烈依赖于晶粒ab平面与带材宽面的夹角θ,由此得到带材中晶粒平面的取向分布.我们发现,Bi-2223/Ag带材中晶粒可在-75°<θ<75°范围内自由生长,但不可能有晶粒的ab面垂直于带材宽面的晶粒存在.研究结果表明:95%的晶粒取向为|θ|<75°范围,|θ|=75°~85°在的晶粒只有5%,而在|θ|>85°的区域没有晶粒分布.
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