利用X射线衍射(XRD)和交流磁化率(Acχ)方法系统地研究了Y1-xEuxBa2Cu3O7-δ(x=0.0~1.0)超导体,研究发现Eu掺杂替代了Y晶位后引起了晶格失配.这种晶格失配与电流密度有密切的联系.对于不同掺杂成分样品,X射线衍射线形分析表明(006)及(007)衍射峰型随掺杂量变化,掺杂浓度在30%和70%附近时,半高宽(FWHM)出现极大值,表明此时样品的晶格失配最大.与此相对应,电流密度Js也在此掺杂浓度范围内达到极大值.我们在晶格失配应力场的钉扎模型下对实验现象进行了讨论,认为Y1-xEuxBa2Cu3O7-δ超导体中由元素替代引起的晶格失配应力场是有效的钉扎中心.
We find Eu substituting Y or Y substituting Eu in Y1-xEuxBa2Cu3O7-δ superconductors causes the lattice mismatch using the methods of X-Ray Diffraction(XRD) and Alternative Current Susceptibility(Acχ). There is a relatively connection between the lattice mismatch and the critical current density Js. The full widths at half maximum(FWHM) of (006) and (007) reflections in the experiment of XRD depend on Eu doping concentration. The maximum of FWHM occurs in the vicinity of x=0.3 and x=0.7, which indicates the lattice mismatch of samples reaches its maximum. Simultaneously, Js also reaches its maximum in the vicinity of x=0.3 and x=0.7. We discuss this experimental phenomenon using the model of stress-field pinning caused by the lattice mismatch. We consider that the lattice mismatch stress-field pinning caused by the lattice mismatch. We consider that the lattice mismatch stree-field, caused by the element substitute in Y1-xEuxBa2Cu3O7-δ superconductors, is an effective pinning center.
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