分别以粉末钛、硅、石墨和钛、碳化硅、石墨为原料,采用反应烧结工艺制备Ti3SiC2材料.结果表明:当以钛、硅、石墨单质粉料为原料时,在1200~1400℃温度范围内能够合成出高纯度的Ti3SiC2块体材料,且其纯度随着硅含量的增加而提高;当原料摩尔比为3:1.3:2和3:1.4:2时,该材料中只有Ti3SiC2相而无其他相存在;而以钛、碳化硅、石墨粉末为原料时,在1200~1400℃温度范围内很难合成出高纯度的Ti3SiC2块体材料.
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