本文采用坩埚下降法生长出20mm×20mm×100mm优质Bi4Si3O12晶体及Ce、Nd和Eu掺杂Bi4Si3O12晶体.测试了晶体的透射光谱、能谱及光产额、FWHM能量分辨率和激发-发射光谱.总结并解释了掺杂影响Bi4Si3O12晶体闪烁性能的规律,探讨了掺杂改善晶体闪烁性能的可能性.
参考文献
[1] | Philipsborn H V .[J].Journal of Crystal Growth,1971,11:348. |
[2] | Fan S J.The Eleventh International Conference on Crystal Growth[M].Advance Program,1995:30. |
[3] | Ishii M.Heavy Scintill.Sci.Ind[A].Workshop,1992:427. |
[4] | Ishii M et al.[J].Prog Crystal Growth and Character,1991,23:245. |
[5] | Kobayashi M et al.[J].Nuclear Instruments and Methods in Physics Research,1983,205:133. |
[6] | Kobayashi M.;Harada K.;Yamaga I.;Ishii M. .BISMUTH SILICATE BI4SI3O12, A FASTER SCINTILLATOR THAN BISMUTH GERMANATE BI4GE3O12[J].Nuclear Instruments and Methods in Physics Research, Section A. Accelerators, Spectrometers, Detectors and Associated Equipment,1996(1/2):45-50. |
[7] | Ishii M.[A].Shanghai,P.R.China,Sep,1997:368. |
[8] | 何景棠 等.[J].高能物理与核物理,1997,21(10):886. |
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