用提拉法生长了质量较好的铁电-铁弹β′-Gd2(MoO4)3晶体.研究了晶体中包裹物的形成原因及晶体转速、提拉速度、温度梯度等对包裹物的影响,分析了晶体开裂的类型及克服的方法.指出了用提拉法生长高质量β′-Gd2(MoO4)3晶体的合适工艺参数.用偏光显微镜对晶体中的畴结构进行了观察,发现样品中存在宽畴和细畴两种类型,结合同一样品减薄实验确定了晶体中的宽畴为铁电畴,细畴为铁弹畴.
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