采用表面钝化和MOCVD低温生长在蓝宝石(0001)面(即C面)和蓝宝石(1102)面(即R面)上形成了InGaN量子点,并构成了该量子点的多层结构.原子力显微镜测试的结果表明单层InGaN量子点平均宽约40nm,高约15nm;而多层量子点上层的量子点则比单层的InGaN量子点大.R面蓝宝石衬底上生长的InGaN量子点和C面蓝宝石衬底上生长的InGaN量子点相比,其PL谱不仅强度高,而且没有多峰结构.这是由于在C面蓝宝石衬底上生长的InGaN/GaN多层量子点沿生长方向[0001]存在较强的内建电场,而在R面蓝宝石衬底上得到的多层量子点沿着生长方向[1120]没有内建电场.InGaN量子点变温光致发光(PL)谱研究发现量子点相关的峰有快速红移现象,这是量子点系统所特有的PL谱特征.用在R面蓝宝石上生长的InGaN量子点作有源层有望避免内建电场的影响,得到高量子效率且发光波长稳定的发光器件.
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