用优化的MBE参数生长了1.3μm发光的InAs/GaAs量子点材料,并制成发光二极管,对不同温度和有源区长度下样品的电致发光谱进行了细致的研究.观察到两个明显的电致发光峰,分别对应于量子点基态和激发态的辐射复合发光.实验表明,由于能态填充效应的影响,适当增大量子点发光器件有源区长度,更有利于获得基态的光发射.这个结果提供了一种控制和调节InAs/GaAs量子点发光二极管和激光器的工作波长的方法.
参考文献
| [1] | Arakawa Y;Sakaki H .Multidimensional Quantum Well Laser and Temperature Dependence of Its Threshold Current[J].Applied Physics Letters,1982,40:939-941. |
| [2] | J. Bloch;J. Shah;L. N. Pfeiffer .Optical properties of multiple layers of self-organized InAs quantum dots emitting at 1.3 μm[J].Applied physics letters,2000(16):2545-2547. |
| [3] | Kohki Mukai;Yoshiaka Nakata;Koji Otsubo .1.3-μm CW Lasing Characteristics of Self-Assembled InGaAs-GaAs Quantum Dots[J].IEEE Journal of Quantum Electronics: A Publication of the IEEE Quantum Electronics and Applications Society,2000(4):472-478. |
| [4] | Ustinov V M;Maleev N A;Zhukov A E et al.InAs/InGaAs Quantum Dot Structures on GaAs Substrates Emitting at 1.3μm[J].Applied Physics Letters,1999,74:2815-2817. |
| [5] | Xiao Dong Wang;Zhichuan Ziu;Songlin Feng .Influence of In_xGa_(1-x)As (0 ≤ x ≤ 0.3) Cap Layer on Structural and Optical Properties of Self-assembled InAs/GaAs Quantum Dots[J].Japanese journal of applied physics,2000(9A Pt.1):5076-5079. |
| [6] | Dieter Bimberg;Marius Grundmann;Nikolai N Ledensov.Quantum Dot Heterostructures[M].New York:John Willey & Sons,1999 |
| [7] | Huffaker DL.;Deppe DG.;Graham LA. .Ultranarrow electroluminescence spectrum from the ground state of an ensemble of self-organized quantum dots[J].Applied physics letters,1998(2):214-216. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%