CZ法生长参数对TeO2晶体质量的影响

人工晶体学报, 2003, 32(2): 165-169. doi: 10.3969/j.issn.1000-985X.2003.02.016

CZ法生长参数对TeO2晶体质量的影响

陶绍军 ^1, , 桑文斌 ^2, , 钱永彪 ^3, , 闵嘉华 ^4, , 方雅珂 ^5,

1.上海大学材料学院,上海,201800

2.上海大学材料学院,上海,201800

3.上海大学材料学院,上海,201800

4.上海大学材料学院,上海,201800

5.上海大学材料学院,上海,201800

关键词：氧化碲晶体 , CZ法 , 工艺参数 , 晶体缺陷

Study on the Influence of Growth Parameters on TeO2 Single Crystal Quality

本文主要讨论CZ法生长TeO2晶体中温度梯度、拉速、转速等工艺参数对晶体质量的影响,分析了晶体开裂、包裹物等宏观缺陷以及位错等微观缺陷的形成机理.从晶体形态、包裹体和位错密度变化等方面探讨了晶体生长参数与晶体缺陷之间的内在关系.

参考文献

[1]	Li WJ.;Zhong WZ.;Yin ZW.;Shi EW. .Growth mechanism and growth habit of oxide crystals[J].Journal of Crystal Growth,1999(1/2):186-196.
[2]	Kumaragurubaran S.;Subramanian C.;Ramasamy P.;Krishnamurthy D. .Growth of paratellurite crystals: effect of axial temperature gradient on the quality of the crystals[J].Journal of Crystal Growth,2000(1/4):276-280.
[3]	Holovey V M;Tkachenko N N et al.Paratellurite Single Crystal Growth at Low Gradient Conditions[J].Materials Science Forum,1996,215:119-122.
[4]	季小红,桑文斌,刘冬华,李冬梅,钱永彪,史伟民,闵嘉华.声光晶体TeO2的生长及缺陷研究[J].人工晶体学报,2001(01):93-98.
[5]	Miyazawa S .Fluid-flow Effect on Gas-bubble Entrapment in Czochralski-growth Oxide Crystals[J].Journal of Crystal Growth,1980,49:515-521.
[6]	Kumaragurubaran S;Krishnamurthy D;Subramanian C;Ramasamy P .Investigations on the Growth of BiTeO5 and TeO2 crystals[J].Journal of Crystal Grwoth,1999,197:210-215.
[7]	钱叙法.直拉法生长大尺寸TeO2单晶生长条纹的探讨[J].人工晶体学报,1997(03):381.
[8]	Klapper H. .Generation and propagation of dislocations during crystal growth[J].Materials Chemistry and Physics,2000(2/3):101-109.

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