气压对VHF-PECVD制备的μc-Si:H 薄膜特性影响的研究

1.南开大学光电子所,天津,300071

2.南开大学光电子所,天津,300071

3.南开大学光电子所,天津,300071

4.南开大学光电子所,天津,300071

5.南开大学光电子所,天津,300071

6.南开大学光电子所,天津,300071

7.南开大学光电子所,天津,300071

8.南开大学光电子所,天津,300071

9.南开大学光电子所,天津,300071

10.南开大学光电子所,天津,300071

11.南开大学光电子所,天津,300071

基金项目: 国家重点基础研究发展计划(973计划)(G2000028202,G2000028203) 教育部科学技术研究项目(02167) 国家高技术研究发展计划(863计划)(2002303261)

A Study on the Influence of Deposition Pressure on the Properties of the μc-Si:H Films Fabricated by VHF-PECVD

本文主要研究了用VHF-PECVD方法制备的不同工作气压的微晶硅薄膜样品.结果表明:沉积速率随反应气压的增大而逐渐增大;光敏性(光电导/暗电导)和激活能测试结果给出了相同的变化规律;傅立叶红外测试、X射线衍射和室温微区喇曼谱的结果都表明了样品的晶化特性;通过工艺的具体优化得出了器件级的微晶硅材料.

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