研究了PVT法生长SiC过程中的传热行为,以优化生长条件、获得高质量单晶.该研究是针对坩埚盖(籽晶粘附于坩埚盖上)和炉盖之间的传热行为进行的.研究认为,坩埚盖上部石墨毡开孔形状和大小对坩埚盖的径向温度场有很大影响.采用本文简化的模型可以估算坩埚在不同位置下、不同的石墨毡开孔形状和大小时坩埚盖和炉盖之间总的辐射热阻和传热量.对影响坩埚盖和炉盖之间传热的因素进行了讨论.另外,讨论了在生长过程中动态调整坩埚盖散热条件的可行性.
A heat transfer analysis for PVT growth of SiC was performed to optimize the growth conditions, aiming at obtaining better quality crystals. The analysis was focused on the heat transfer between the furnace lid and the crucible lid to which the seed was attached. It was found that the thermal shielding condition above the crucible lid, i.e. the hole shape and size in the graphite felt, plays an important role in determining the temperature uniformity on the crucible lid. The total radiation resistance and the heat transfer amount between the crucible lid and the furnace lid can be calculated using the simplified model presented in this paper for different positions of the crucible and different shapes and diameters of the hole in the graphite felt. The factors affecting the heat transfer amount between the crucible lid and the furnace lid were discussed. Besides, the feasibility of dynamic modification of the heat transfer conditions of the crucible lid was discussed.
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