High-k材料研究进展与存在的问题

人工晶体学报, 2004, 33(5): 731-735. doi: 10.3969/j.issn.1000-985X.2004.05.008

High-k材料研究进展与存在的问题

杨雪娜 ^1, , 王弘 ^2, , 张寅 ^3, , 姚伟峰 ^4, , 尚淑霞 ^5, , 周静涛 ^6, , 刘延辉 ^7,

1.山东大学晶体材料国家重点实验室,济南,250100

2.山东大学晶体材料国家重点实验室,济南,250100

3.山东大学晶体材料国家重点实验室,济南,250100

4.山东大学晶体材料国家重点实验室,济南,250100

5.山东大学环境与工程科学学院,济南,250100

6.山东大学晶体材料国家重点实验室,济南,250100

7.山东大学晶体材料国家重点实验室,济南,250100

基金项目: 国家重点实验室基金(04010125)

关键词： High-k材料 , MOSFET , 栅介质 , 薄膜

The Progress and Problems of High-k Materials

随着集成电路的飞速发展,SiO2作为传统的栅介质将不能满足MOSFET器件高集成度的要求,需要一种新型High-k材料来代替传统的SiO2,这就要综合考虑以下几个方面问题:(1)介电常数和势垒高度;(2)热稳定性;(3)薄膜形态;(4)界面质量;(5)与Si基栅兼容;(6)工艺兼容性;(7)可靠性.本文综述了几类High-k栅介质材料的研究现状及存在的问题.目前任何一种有望替代SiO2的栅介质材料都不能完全满足上述几点要求.但是,科学工作者们已经发现了几种有希望的High-k候选材料.

参考文献

[1]	Angus L K;Jon P M;Streiffer S K .Alterative Dielectrics to Silicon Dioxide for Memory and Logic Devices[J].Nature,2000,406:1032-1038.
[2]	Wilk GD.;Anthony JM.;Wallace RM. .High-kappa gate dielectrics: Current status and materials properties considerations [Review][J].Journal of Applied Physics,2001(10):5243-5275.
[3]	Shannon R D .Dielectric Polarizabilities of Ions in Oxides and Fluorides[J].Journal of Applied Physics,1993,73(01):348-366.
[4]	M. Houssa;V. V. Afanas'ev;A. Stesmans .Variation in the fixed charge density of SiO_(x)/ZrO_(2) gate dielectric stacks during postdeposition oxidation[J].Applied physics letters,2000(12):1885-1887.
[5]	J. Kwo;M. Hong;A. R. Kortan .High ε gate dielectrics Gd_(2)O_(3) and Y_(2)O_(3) for silicon[J].Applied physics letters,2000(1):130-132.
[6]	Lucovsky G;Wu Y;Niimi H et al.Bonding Constrains and Defect Formation at Interfaces between Crystalline Silicon and Advanced Single Layer and Composite Gate Dielectrics[J].Applied Physics Letters,1999,74(14):2005-2007.
[7]	E. P. Gusev;M. Copel;E. Cartier .High-resolution depth profiling in ultrathin Al_(2)O_(3) films on Si[J].Applied physics letters,2000(2):176-178.
[8]	M. Copel;M. Gribelyuk;E. Gusev .Structure and stability of ultrathin zirconium oxide layers on Si(001)[J].Applied physics letters,2000(4):436-438.
[9]	M. Houssa;V. V. Afanas'ev;A. Stesmans .Variation in the fixed charge density of SiO_(x)/ZrO_(2) gate dielectric stacks during postdeposition oxidation[J].Applied physics letters,2000(12):1885-1887.
[10]	Zhang H;Solanki R;Roberds B 等.High Permittivity Thin Film Namolaminates[J].Journal of Applied Physics,2000,87(04):1921-1924.
[11]	Hidekazu Sato;Akira Izumi;Hideki Matsumura .Ultrathin silicon nitride gate dielectrics prepared by catalytic chemical vapor deposition at low temperatures[J].Applied physics letters,2000(17):2752-2754.
[12]	Gusev E P;Copel M;Cartier E et al.High-resolution Depth Profiling in Ultrathin Al2O3 Film on Si[J].Applied Physics Letters,2000,76(02):176-178.
[13]	Manchanda L;Morris M D;Green M L 等.Muti-component High-k Gate Dielectrics for the Silicon Industry[J].Microelectronic Engineering,2001,59:351-359.
[14]	Hyelan Lee;Sanghun Jeon;Hyunsang Hwang .Electrical characteristics of a Dy-doped HfO_(2) gate dielectric[J].Applied physics letters,2001(16):2615-2617.
[15]	S. Guha;E. Cartier;M. A. Gribelyuk .Atomic beam deposition of lanthanum- and yttrium-based oxide thin films for gate dielectrics[J].Applied physics letters,2000(17):2710-2712.
[16]	G. D. Wilk;R. M. Wallace;J. M. Anthony .Hafnium and zirconium silicates for advanced gate dielectrics[J].Journal of Applied Physics,2000(1):484-492.
[17]	Wen-Jie Qi;Renee Nieh;Easwar Dharmarajan .Ultrathin zirconium silicate film with good thermal stability for alternative gate dielectric application[J].Applied physics letters,2000(11):1704-1706.
[18]	Eisenbeiser K.;Yu Z.;Ramdani J.;Curless JA.;Hallmark JA. Droopad R.;Ooms WJ.;Salem L.;Bradshaw S.;Overgaard CD.;Finder JM. .Field effect transistors with SrTiO3 gate dielectric on Si[J].Applied physics letters,2000(10):1324-1326.
[19]	H WANG;S.X SHANG;W.F YAO .DIELECTRIC PROPERTIES OF Bi_2Ti_2O_7 FILMS GROWN ON Si(100) SUBSTRATE BY APMOCVD[J].Ferroelectrics: Letters Section,2002(1):117-123.
[20]	Wang H;Fu L W;Shang Sh X 等.The Influence of Substrate Temperature and Annealing on Phase Formation and Crystalline Properties of Bismuth Titanate Films by APMOCVD[J].Journal of Physics D:Applied Physics,1994,27:393-395.
[21]	Kuniki Y;Minoru I;Soichiro O 等.Preparation of Ferroelectric Bi4Ti3O12 Thin Films with C-axis Orientation by Atomospheric-pressure Metal-organic Chemical Vapor Deposition[J].Japanese Journal of Applied Physics,1995,34:2425-2429.
[22]	Takashi N;Rusul M;Masaru S 等.Preparation of C-axis-oriented Bi4Ti3O12 Thin Films by Metalorganic Chemical Vapor Deposition[J].Japanese Journal of Applied Physics,1993,32:4086-4088.
[23]	A. Q. Jiang;Z. X. Hu;L. D. Zhang .The induced phase transformation and oxygen vacancy relaxation in La-modified bismuth titanate ceramics[J].Applied physics letters,1999(1):114-116.

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材料期刊网

High-k材料研究进展与存在的问题

The Progress and Problems of High-k Materials

参考文献