本文采用VHF-PECVD技术制备了不同结构的硅薄膜,分析研究了有、无纯化器对制备薄膜特性的影响.电学特性和结构特性测试结果表明:在10W的功率条件下,使用纯化器时制备的薄膜是光敏性满足非晶硅电池要求的材料,而在不使用纯化器时制备的材料是适用于太阳能电池有源层的纳米硅材料;在30W时,不使用纯化器制备薄膜的晶化明显增大,光敏性也相应的降低,50W的条件表现出相类似的结果,初步分析是氧引起的差别;激活能的测试结果也表明,使用纯化器会降低材料中的氧含量,即表现激活能相对大;另外,沉积速率的测试结果也给出:耗尽区所在位置与是否使用纯化器有很大关系.
参考文献
| [1] | Meier J.;Dubail S.;Kroll U.;Dubail J.;Golay S. Feitknecht L.;Torres P.;Fay S.;Fischer D.;Shah A.;Vallat-Sauvain E. .Microcrystalline/micromorph silicon thin-film solar cells prepared by VHF-CD technique[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,2001(1/4):73-84. |
| [2] | Kepper H;Meier J;Torres P;Fischer D Shah A .[J].Journal of Applied Physiology,1999,A69:169-177. |
| [3] | Shah A.;Meier J.;Vallat-Sauvain E.;Wyrsch N.;Kroll U.;Droz C.;Graf U. .Material and solar cell research in microcrystalline silicon[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,2003(1/4):469-491. |
| [4] | Fukawa M.;Guo LH.;Kondo M.;Matsuda A.;Suzuki S. .High rate growth of microcrystalline silicon using a high-pressure depletion method with VHF plasma[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,2001(1/4):217-223. |
| [5] | Rech B.;Muller J.;Wieder S.;Wagner H.;Roschek T. .Amorphous and microcrystalline silicon solar cells prepared at high deposition rates using RF (13.56 MHz) plasma excitation frequencies[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,2001(1/4):267-273. |
| [6] | Schropp REI. .Advances in solar cells made with hot wire chemical vapor deposition (HWCVD): superior films and devices at low equipment cost[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2002(0):17-25. |
| [7] | Vetterl O.;Carius R.;Hapke P.;Houben L.;Kluth O.;Lambertz A.;Muck A.;Rech B.;Wagner H.;Finger F. .Intrinsic microcrystalline silicon: A new material for photovoltaics[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,2000(1/2):97-108. |
| [8] | Torres P;Meier J;Kluckiger R et al.Device Grade Microcrystalline Silicon owingto Reduced Oxygen Contamination[J].Applied Physics Letters,1996,69(10):1373-1375. |
| [9] | Fluckiger R;Meier J;Keppner H.Microcrystalline Silicon Prepared with the VHF-GD Technique for p-I-n Solar Cell Applications[A].Switzerland:Harwood Academic Publisher,1992:612-616. |
| [10] | Sukti Hazra;Swati Ray .Nanocrystalline Silicon as Intrinsic Layer in Thin Film Solar Cells[J].Solid State Communications,1999,109:125-128. |
| [11] | Yusuke Fukuda;Yoshikazu Sakuma;Chisato Fukai;Yukihiro Fujimura;Kazufumi Azuma;Hajime Shirai .Optical emission spectroscopy study toward high rate growth of microcrystalline silicon[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2001(2):256-260. |
| [12] | 马智训,廖显伯,孔光临,褚君浩.镶嵌在氧化硅薄膜中纳米硅的Raman散射研究[J].中国科学(A辑),2000(02):169-175. |
| [13] | Kondo Michio;Fukawa Makoto;Guo Lihui;Matasuda Akihisa .High Growth Rate of Microcrystalline Silicon at Low Temperature[J].Journal of Non-Crystalline Solids,2000,266-269:84-89. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%