3C-SiC的液相外延生长及其结构的保持与分析

1.西安理工大学电子工程系,西安,710048

2.西安理工大学电子工程系,西安,710048

3.西安理工大学电子工程系,西安,710048

4.西安理工大学电子工程系,西安,710048

5.西安理工大学晶体生长设备研究所,西安,710048

基金项目: 国防重点实验室基金(51432050101 SX0101)

Liquid Phase Epitaxial Growth of 3C-SiC and Studies on Steadiness and Characterization of Its Structure

3C-SiC因其优越的物理和电学性能是制造耐高温、大功率、高频率器件的理想材料.本文报道了采用液相外延法从硅熔体中生长3C-SiC及抑制其相变的研究进展.采用X射线衍射、透射电镜、Raman散射等检测手段对样品进行结构分析,结果表明所制备的样品为3C-SiC单晶体.

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