本文采用导向温度梯度法生长出了透明γ-LiAlO2晶体,借助扫描电镜和X射线粉末衍射系统地研究了温度梯度法生长晶体的工艺过程,坩埚中晶体上部为LiAl5O8和LiAlO2多晶体,中部[100]方向自由结晶形成了单一透明的γ-LiAlO2晶体,下部为钼金属颗粒,蓝宝石籽晶被严重污染;坩埚内分成上、中、下三部分是晶体生长过程中熔体组分中Li2O挥发和腐蚀造成的.
参考文献
| [1] | Xu Ke;Xu Jun;Deng Peizhen et al.γ-LiAlO2 Single Crystal: A Novel Substrate for GaN Epitaxy[J].Journal of Crystal Growth,1998,193:127-132. |
| [2] | Ponce F A;Bour D P .Nitride-based Semiconductors for Blue and Green Light-emitting Devices[J].Nature,1997,386:351-359. |
| [3] | Tang ZK.;Yu P.;Kawasaki M.;Ohtomo A.;Koinuma H.;Segawa Y.;Wong GKL. .Room-temperature ultraviolet laser emission from self-assembled ZnO microcrystallite thin films[J].Applied physics letters,1998(25):3270-3272. |
| [4] | Cao H.;Ong HC.;Ho ST.;Dai JY.;Wu JY.;Chang RPH.;Zhao YG. .Ultraviolet lasing in resonators formed by scattering in semiconductor polycrystalline films[J].Applied physics letters,1998(25):3656-3658. |
| [5] | Bagnall DM;Chen YF;Zhu Z;Yao T;Koyama S;Shen MY;Goto T .Optically pumped lasing of ZnO at room temperature[J].Applied physics letters,1997(17):2230-2232. |
| [6] | Vispute RD.;Choopun S.;Sharma RP.;Venkatesan T.;He M. Tang X.;Halpern JB.;Spencer MG.;Li YX.;Salamanca-Riba LG.;Iliadis AA. Jones KA.;Talyansky V. .Heteroepitaxy of ZnO on GaN and its implications for fabrication of hybrid optoelectronic devices[J].Applied physics letters,1998(3):348-350. |
| [7] | 王新强,杜国同,姜秀英.ZnO薄膜的研究进展[J].半导体光电,2000(04):233. |
| [8] | S. Kuck;P. Jander .Luminescence from V~(3+) in tetrahedral oxo-coordination[J].Chemical Physics Letters,1999(1/2):189-194. |
| [9] | S. Kuck;P. Jander .Spectroscopic properties of the tetrahedrally coordinated V~3+ ion in oxide crystals[J].Optical materials,1999(3):299-310. |
| [10] | Ng H M .Molecular-beam Epitaxy of GaN/AlxGa1-xN Multiple Quantum Wells on R-plane(10-12) Sappire Substrates[J].Applied Physics Letters,2002,80:4369. |
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