多孔硅形成机理的逆结晶学模型

人工晶体学报, 2005, 34(1): 178-182. doi: 10.3969/j.issn.1000-985X.2005.01.038

多孔硅形成机理的逆结晶学模型

王海燕 ^1, , 卢景霄 ^2, , 郜晓勇 ^3, , 孙晓峰 ^4, , 段启亮 ^5,

1.郑州大学物理工程学院材料物理教育部重点实验室,郑州,450052

2.郑州大学物理工程学院材料物理教育部重点实验室,郑州,450052

3.郑州大学物理工程学院材料物理教育部重点实验室,郑州,450052

4.郑州大学物理工程学院材料物理教育部重点实验室,郑州,450052

5.郑州大学物理工程学院材料物理教育部重点实验室,郑州,450052

关键词：自选择性 , 对称性 , 逆结晶学 , 缺陷控制 , 扩散控制

A Novel Inverse Crystal Growth Model of Porous Polysilicon Formation Process

Keywords： self-selectivity , symmetry , inverse crystallography , defect control , diffusion control

本文概述了多孔硅形成机理和现有模型.通过观察和分析多晶多孔硅化学腐蚀机理提出了一个新模型:多孔硅形成机理的逆结晶学模型.这个模型指出多晶多孔硅均匀形貌具有自选择性,而此自选择性受结晶学原理控制.此模型的提出对研究晶体生长有用.

The present study on the mechanisms of the formation of porous polysilicon (PPS) and its existed model were reviewed. By observing and analyzing the formation of PPS with chemical etching, a new model of PPS formation was proposed: inverse crystallography model of PPS formation process. This model showed that the formation of the uniform morphology of PPS during the reaction process was of selfselectivity. Based on the view, it was useful to the research of crystal growth process.

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