蓝宝石衬底是目前最为普遍的一种衬底材料,是生长GaN、ZnO材料最常用的衬底.本文用光学显微镜、原子力显微镜(AFM)和高分辨X射线双晶洐射对蓝宝石衬底进行了分析测试,系统研究了经过机械抛光、化学机械抛光、化学腐蚀等表面处理对蓝宝石衬底表面性能的影响.结果表明经过化学机械抛光随后再经腐蚀后的蓝宝石衬底的表面性能最好.
参考文献
| [1] | 王崇鲁.白宝石单晶[M].天津:天津科学技术出版社,1983:16. |
| [2] | Gentilman R L;Maguire E A;Starrett H S et al.Strength and Transmittance of Sapphire and Strengthened Sapphire[J].Journal of the American Ceramic Society,1981,64:C116. |
| [3] | Jihong Li;Steven R. Nutt;Kevin W. Kirby .Surface modification of sapphire by magnesium-ion implantation[J].Journal of the American Ceramic Society,1999(11):3260-3262. |
| [4] | Smith M;Schmid K;Schmid F.Window and Dome Technologies and Materials Ⅳ[A].Orlando,USA,1999-04-05 |
| [5] | Orton JW.;Foxon CT. .Group III nitride semiconductors for short wavelength light-emitting devices [Review][J].Reports on Progress in Physics,1998(1):1-75. |
| [6] | Nakamura S.Ann .InGaN-based Laser Diodes[J].Rew Mater Sci,1998,28:125. |
| [7] | Nakamura S;Senoh M;Iwasa N et al.High-brightness InGaN Blue, Green and Yellow Light-emitting Diodes with Quantum Well Structures[J].Japanese Journal of Applied Physics,1995,34:797. |
| [8] | Wang T;Bai J;Sakai S .Influence of InGaN/GaN Quantum-well Structure on the Performance of Light-emitting Diodes and Laser Diodes Grown on Sapphire Substrates[J].Journal of Crystal Growth,2001,224(05) |
| [9] | Nakamura S;Senoh M;Nagahama S et al.Characteristics of InGaN Multi-quantum-well-structure Laser Diodes[J].Applied Physics Letters,1996,68:3269. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%