欢迎登录材料期刊网

材料期刊网

高级检索

综述了铁电薄膜/半导体异质结构研究近年来的新进展.重点介绍了异质结构制备工艺的改进和界面的最新研究状况.简单叙述了全钙钛矿异质结构的发展情况.指出了铁电薄膜/半导体异质结构研究领域需要解决的一些问题.

参考文献

[1] Cruz Ma P;Portelles Jorge J;Siqueiros Jesus M.Growth Reorientation with the Annealing Temperature of SrBi2Ta2O9 Film Deposited by PLD[A].,2004:249-253.
[2] Kawayama I;Kotani K;Tonouchi M .Initial growth of SrBi2Ta2O9 thin films on various substrates[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2004(0):160-163.
[3] Cui T;Markus D;Zurn S et al.Piezoelectric Thin Films Formed by MOD on Cantilever Beams for Microsensors and Actuators[J].MICROSYSTEM TECHNOLOGIES,2004,10:137-141.
[4] Tingkai Li;Sheng Teng Hsu;Bruce Ulrich.Integration Processes and Properties of Pt/Pb5 Ge30O11/( Zr, Hf)O2/Si on Transistor Memory Devices[A].Massachusetts,USA,2002-11-26:371-376.
[5] Yoshimura T;Ito D;Sakata H.Investigation of Retention Properties for YMnO3 Based Metal/Ferroelectric/Insulator/Semiconductor Capacitors[A].Boston,Massachusetts,USA,2004:309-314.
[6] Spirin VV.;Sokolov IA.;No K. .Determination of piezoelectric coefficients of ferroelectric thin films using GaAs : Cr adaptive interferometer[J].Optics & Laser Technology,2004(4):337-340.
[7] SANG-MO KOO;S. I. KHARTSEV;C.-M. ZETTERLING .Processing and Properties of Ferroelectric Pb(Zr,Ti)O_3/Silicon Carbide Field-Effect Transistor[J].Integrated Ferroelectrics,2003(1):1221-1231.
[8] W. C. Shin;N. J. Seong;K. J. Choi .Effect of Bi_2O_3 Buffer Layers on Retention Properties of SrBi_2Ta_2O_9 Thin Films by MOCVD[J].Electrochemical and solid-state letters,2004(3):F15-F17.
[9] Woong-Chul Shin;Kyu-Jeong Choi;Soon-Gil Yoon .Low-temperature crystallization of SrBi_2Ta_2O_9 thin films with Bi_2O_3 interfacial layers by liquid-delivery metalorganic chemical vapor deposition[J].Journal of Materials Research,2002(1):26-30.
[10] X.H. Liu;Z.G. Liu;Y.P. Wang;T. Zhu;J.M. Liu .Characteristics of SrBi_2Ta_2O_9 ferroelectric films on GaAs with a TiO_2 buffer layer[J].Applied physics, A. Materials science & processing,2003(2):197-199.
[11] Takamitsu Higuchi;KoichiMorozumi;Setsuya Iwashita.Fabrication of SrRuO3 Epitaxial Thin Films on YBa2Cu3Ox/CeO2/YSZ-buffered Si Substrates by Pulsed Laser Deposition[A].,2004:218.
[12] Walter M .Gilmore Ⅲ,Soma Chattopadhyay,Alex Kvit.Growth,Characterization and Electrical Properties of PbZr0.52Ti0.48O3 Thin Films on Boston,MA,US.Buffered Silicon Substrates Using Pulsed Laser Deposition[J].Journal of Materials Research,2003,18:111-114.
[13] Il-Doo Kim;Kwi-Young Han;Ho-Gi Kim .Characterization of LSCO/Ir and LSCO/Ru Structure as Diffusion Barrier Layers for Highly Integrated Memory Devices[J].Electrochemical and solid-state letters,2004(2):F11-F14.
[14] Bernard O;Andrieux M;Poissonnet S .Mechanical Behavior of Ferroelectric'Films on Perovskite Substrate[J].Journal of the European Ceramic Society,2004,24(05):763-773.
[15] Wang J;Zheng H;Ma Z;Prasertchoung S;Wuttig M;Droopad R;Yu J;Eisenbeiser K;Ramesh R .Epitaxial BiFeO3 thin films on Si[J].Applied physics letters,2004(13):2574-2576.
[16] Tong FQ.;Yu WX.;Liu YF.;Zuo Y.;Ge X. .Microstructural study of BaTiO3/SrTiO3 superlattice[J].Materials Science & Engineering, B. Solid-State Materials for Advanced Technology,2003(1):6-9.
[17] T.W. Kim;Y.S. Yoon .Microstructural and electrical property studies of Pb(Zr_0.52Ti_0.48)O_3 films grown on p-InP (100) substrates by a radio-frequency magnetron-sputtering technique at low temperature[J].Journal of Materials Research,2000(1):199-202.
[18] Sugiyama O;Murakami K;Kaneko S .XPS Analysis of Surface Layer of Sol-gel-derived PZT Thin Films[J].Journal of the European Ceramic Society,2004,24(06):1157-1160.
[19] 黄龙波;刘殊松;龙浩 等.铁电薄膜与底电极之间界面的异质结效应[J].真空科学与技术,1997,17(04):259-263.
[20] Tan E H;Sun L Z .Dislocation Dynamics in Semiconductor Thin Film-substrate Systems[J].Materials Research Society Symposium Proceedings,2004,795:47-52.
[21] Jennifer Ruglovsky L;Young-Bae Park;Cecily Ryan A.Wafer Bonding and Layer Transfer for Thin Film Ferroelectrics[A].Boston,Massachusetts,USA,2003:331-336.
[22] D. Bolten;U. Bottger;R. Waser .Effect of interfaces in Monte Carlo computer simulations of ferroelectric materials[J].Applied physics letters,2004(13):2379-2381.
[23] Masanori Okuyama;Akira Shibuya;Minoru Noda.Growth by Pulsed Laser Deposition and Ferroelectric Property of Natural Superlattice Structured Ferroelectric Thin Films of Bi4Ti3O12-SrBi4Ti4O15 and Bi3TiNbO9-Bi4Ti3O12[A].Nashville,Tennessee,USA,2004:125-137.
[24] Yates T J V;Laffont L;Weyland M.3D Analysis of Semiconductor Structures Using HAADF STEM Tomography[J].Electron Microscopy and Analysis,2004:31-34.
[25] Liu J.Advanced Electron Microscopy in Developing Nano Structured Heterogeneous Catalysts[J].NANOTECHNOLOGY,2004:361-402.
[26] Mathews S;Ramesh R;Venkatesan T et al.Ferroelectric Field Effect Transistor Based on Epitaxial Perovskite Heterostructures[J].Science,1997,276(5310):238-240.
[27] Wu T;Ogale S B;Garrison J E.Deposition and Electrical Characterization of Dielectric/Ferromagnetic Heterostructure. Magneto Resistive Oxides and Related Materials[M].Boston,2001:363-370.
上一张 下一张
上一张 下一张
计量
  • 下载量()
  • 访问量()
文章评分
  • 您的评分:
  • 1
    0%
  • 2
    0%
  • 3
    0%
  • 4
    0%
  • 5
    0%