本文利用高分辨率多重晶多重反射X射线衍射技术对分子束外延CdTe(211)B/ Si(211)与CdTe(211)B/GaAs(211)B材料的CdTe外延薄膜进行了倒易点二维扫描,并通过获得的倒易点二维图,对CdTe缓冲层的应力和应变状况进行了分析.研究显示,对于一定厚度的CdTe外延薄膜,在从生长温度280℃降至室温20℃的过程中,由于和衬底存在热膨胀系数的差异,将在外延薄膜中产生热应力,使外延薄膜发生应变,并且这种应变取代了失配应变,在晶格畸变中占据主导地位.对于Si衬底,热应变表现为张应力;对于GaAs衬底,热应变表现为压应力.该研究结果对于进一步优化在大失配的异质衬底上外延同Hg1-xCdxTe材料晶格匹配的Cd1-yZnyTe材料的Zn组分具有指导意义.
参考文献
| [1] | Norton P .HgCdTe Infrared Detectors[J].Opoto-eletronics Review,2002,10:159. |
| [2] | Varesi J B et al.Fabrication of High-performance Large-format MWIR Focal Plane Arrays from MBE-grown HgCdTe on 4" Silicon Substrates[J].Journal of Electronic Materials,2001,30:559. |
| [3] | Maranowski K D et al.MBE Growth of HgCdTe on Silicon Substrates for Large Format MWIR Focal Plane Arrays[J].Journal of Electronic Materials,2001,30:619. |
| [4] | He L et al.Composition Control and Surface Defects of MBE-grown HgCdTe[J].Journal of Crystal Growth,2001,227-228:677. |
| [5] | He L et al.A Study of MBE Growth and Thermal Annealing of P-type Long Wavelength HgCdTe[J].Journal of Crystal Growth,1999,201-202:524. |
| [6] | Keith Bowen D;Brian Tanner K.High Resolution X-ray Diffractometry and Topography[M].Taylor & Francis Ltd,2001 |
| [7] | Fewster P F.X-ray Scattering from Semiconductors Published by Imperial College Press[M].,2000 |
| [8] | PETER Capper.Properties of Narrow Gap Cadmium based compounds[M].Short Run Press Ltd England,1994 |
| [9] | Yao T.Surface Physics[M].Philadephia:Gordon and Breach Sci Publ,1992:124-135. |
| [10] | Hornstra J;Bartels W J .Determination of the Lattice Constant of Epitaxial Layers of Ⅲ-Ⅴ Compounds[J].Journal of Crystal Growth,1978,44:513-517. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%