采用PbO作助溶剂,我们在钛酸锶(STO)衬底上用液相外延方法生长了一层具有特定取向的PZNT岛状外延膜,并通过引入c轴取向的PZT过渡层后,使原来的岛状三维生长转变为二维生长,显著改善了外延膜的质量,获得了几个微米厚、较完整的PZNT膜.实验证明:在氧化镁和铝酸镧(001)基片以及STO(110)/(111)衬底上,PZNT晶粒以自发形核为主,外延生长膜主要呈现岛状形貌;取STO(001)衬底,膜颗粒取向一致性好,并可获得完整的PZNT膜.
参考文献
| [1] | Yamashita Y;Harada K .Crystal Growth and Electrical Properties of Lead Scandium Niobate Lead Titanate Binary Single Crystals[J].Japanese Journal of Applied Physics,1997,36(9B):6039. |
| [2] | Park SE.;Shrout TR. .ULTRAHIGH STRAIN AND PIEZOELECTRIC BEHAVIOR IN RELAXOR BASED FERROELECTRIC SINGLE CRYSTALS[J].Journal of Applied Physics,1997(4):1804-1811. |
| [3] | Xu GS.;Guo YP.;Gao YQ.;Xu HQ.;Qi ZY.;Zhong WZ.;Yin ZW.;Luo HS. .Growth and piezoelectric properties of Pb(Mg1/3Nb2/3)O-3-PbTiO3 crystals by the modified Bridgman technique[J].Solid State Communications,2001(7/8):321-324. |
| [4] | 郭益平,罗豪更,徐海清,贺天厚,方必军,殷之文.铅基弛豫型铁电单晶研究进展及其应用[J].人工晶体学报,2001(04):330-336. |
| [5] | Gong W;Li J F;Chu X C et al.Texture Control of Sol-gel Derived Pb(Mg1/3 Nb2/3 )O3-PbTiO3 Thin Films Using Seeding Layer[J].Journal of the American Ceramic Society,2004,87(06):1031. |
| [6] | Yamashita Y;Harada K;Saitoh S .Recent Applications of Relaxor Materials[J].Ferroelectrics,1998,219(1-4):665. |
| [7] | Harada K.;Kobayashi T.;Saitoh S.;Yamashita Y.;Shimanuki S. .Crystal growth and electrical properties of Pb((Zn1/3Nb2/3)(0.91)Ti-0.09)O-3 single crystals produced by solution Bridgman method[J].Journal of the American Ceramic Society,1998(11):2785-2788. |
| [8] | Orauttapong D et al.Phase Diagram of the Relaxor Ferroelectric(1-x)Pb(Zn1/3Nb2/3)O3-xPbTiO3[J].Physical Review B,2001,65(14):144101. |
| [9] | 李国荣,罗豪,殷庆瑞.PMN-PT驰豫铁电单晶及其超声换能器性能研究[J].无机材料学报,2001(06):1077-1083. |
| [10] | Fang BJ.;Xu HQ.;He TH.;Luo HS.;Yin ZW. .Growth mechanism and electrical properties of Pb[(Zn1/3Nb2/3)(0.91)Ti-0.09]O-3 single crystals by a modified Bridgman method[J].Journal of Crystal Growth,2002(3/4):318-326. |
| [11] | Xu J Y;Fan S J;Lu B S et al.Seeded Growth of Relaxor Ferroelectric Single Crystals Pb O3 by the Vertical Bridgman Method[J].Japanese Journal of Applied Physics,2002,41(11):7000. |
| [12] | Wakiya N;Wakiya N;Shinozaki K et al.Estimation of Phase Stability in Pb(Mg1/3 Nb2/3 )O3 and Pb(Zn1/3 Nb2/3 )O3 Using the Bond Valence Approach[J].Journal of the American Ceramic Society,1997,80(12):3217. |
| [13] | Fan H Q;Lee S H;Yoon C B et al.Perovskite Structure Development and Electrical Properties of PZN Based Thin Films[J].Journal of the European Ceramic Society,2002,22(9-10):1699. |
| [14] | Zeng XH.;Yao X.;Rao QL.;Zhang WL.;Hu H.;Xu HY. .LPE growth of the PZNT91/9 film on the (001) SrTiO3 substrate[J].Journal of Crystal Growth,2004(1/4):251-254. |
| [15] | 仲维卓;华素坤.晶体生长形态学[M].北京:科学出版社,1999:208. |
| [16] | Harada K;Hosono Y;Yamashita Y et al.Piezoelectric Pb O3 Single Crystals with a Diameter of 2 Inches by the Solution Bridgman Method Supported on the Bottom of a Crucible[J].Journal of Crystal Growth,2002,237(01):848. |
| [17] | Dong M.;Ye ZG. .High temperature thermodynamic properties and pseudo-binary phase diagram of the Pb(Zn1/3Nb2/3)(0.91)Ti0.09O3-PbO system[J].Japanese journal of applied physics,2001(7):4604-4610. |
| [18] | Zhang L.;Ye ZG.;Dong M. .Flux growth and characterization of the relaxer-based Pb[(Zn1/3Nb2/3)(1-x)Ti-x]O-3 [PZNT] piezocrystals[J].Materials Science & Engineering, B. Solid-State Materials for Advanced Technology,2000(2/3):96-104. |
| [19] | Ye ZG.;Yamashita Y.;Dong M. .Thermal stability of the Pb(Zn1/3Nb2/3)O-3 -PbTiO3 [PZNT91/9] and Pb(Mg1/3Nb2/3)O-3-PbTiO3 [PMNT68/32] single crystals[J].Journal of Crystal Growth,2000(1/4):247-251. |
| [20] | Einfeldt S;Reitmeier Z J;Davis R F .Surface Morphology and Strain of GaN Layers Grown Using 6H-SiC(0001)Substrates with Different Buffer Layers[J].Journal of Crystal Growth,2003,253(1-4):129. |
| [21] | Utke I;Klemnz C;Scheel H J et al.Misfit Problems in Epitaxy of High-T-c Superconductors[J].Journal of Crystal Growth,1997,174(1-4):806. |
| [22] | Bedoya C.;Baudour JL.;Madigou V.;Anne M.;Roubin M.;Muller C. .Sr-doped PbZr1-xTixO3 ceramic: structural study and field-induced reorientation of ferroelectric domains[J].Materials Science & Engineering, B. Solid-State Materials for Advanced Technology,2000(1):43-52. |
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