采用大气开放式金属有机化合物化学气相沉积方法(AP-MOCVD),以四异丙醇钛(TTIP)为原料,在不同的实验条件下分别在Si(100)和玻璃基片上制备TiO2薄膜.当气化室温度为140℃,基片温度为350℃时,玻璃基片上生长的薄膜XRD谱中只出现了锐钛矿相(200)晶面的衍射峰,表明此时薄膜高度取向,在Si(100)基片上生长的TiO2薄膜也有取向性.通过SEM观察高度取向的TiO2薄膜表面出现四边形的微结构.
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