本文分析了现有的MOCVD反应器存在的不足,提出了一种新型的反向流动垂直喷淋式反应器:反应气体从基片上方的许多平行小喷管喷入反应区,反应后的尾气又从基片上方出口排出,从而减少了反应物浓度沿衬底径向的不均匀性.通过对反应器进行三维数值模拟,改变喷管的中心距、喷管端与衬底的距离、流量、气体压强等参数,确定了反应室内衬底上方温度场与浓度场为最佳时的参数组合.
参考文献
[1] | Hitchman M L;Jensen K F.Chemical Vapor Deposition[M].Academic Press,1993 |
[2] | Fotiadis D;Kieda S;Jensen K F .Transport Phenomena in Vertical Reactors for Metalorganic Vapor Phase Epitaxy:I.Effects of Heat Transfer Characteristics,Reactor Geometry and Operating Conditions[J].Journal of Crystal Growth,1990,102:441-470. |
[3] | Mihopoulos TG.;Jensen KF.;Hummel SG. .Simulation of flow and growth phenomena in a close-spaced reactor[J].Journal of Crystal Growth,1998(1/4):725-732. |
[4] | Weyburne D W;Ahem B S .Design and Operating Considerations for a Water-cooled Close-spaced Reactant Injector in a Production Scale MOCVD Reactor[J].Journal of Crystal Growth,1997,170:77-82. |
[5] | 章梓雄;董曾南.粘性流体力学[M].北京:清华大学出版社,1998:29-30. |
[6] | FLUENT6.0 User's Guide[M].Fluent Inc,2001 |
[7] | Johanes Kaeppeler .CCS Reactors for GaN Applications[EB/OL].http://www.thomasswan.co.uk/down load.html |
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