利用双靶磁控溅射法,在普通石英玻璃基底上成功制备出Ⅱ-Ⅵ族化合物固溶体半导体Zn1-xMgxS多晶薄膜,并用X射线能量色散谱仪(EDS)、原子力显微镜(AFM)、X射线衍射仪(XRD)、紫外-可见(UV-Vis)分光光度计、荧光分光光度计(PL)等测试手段表征了多晶薄膜的成份、表面形貌、晶体结构和光学性质.结果表明:磁控溅射法制备的Zn1-xMgxS多晶薄膜具有立方和六方相混晶相结构,晶粒生长均匀,薄膜在波长小于280nm的紫外区有强烈的吸收,在可见光区紫光范围有一个强的发光峰,而且随着Mg含量的增加,强度增加,吸收边和发光峰的蓝移也增加.蓝移说明了带隙的展宽,其禁带宽度大约从3.6eV增至4.4eV.较高的结晶质量和发光特性显示了它是一种制作短波光电器件和紫外探测器的理想材料.
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