采用两步法制备CuGaxIn1-xSe2薄膜,Cu-In-Ga金属预制层采用铜镓合金靶及铟靶通过磁控溅射方法沉积而成,采用固态源硒化法在硒蒸气密闭环境中硒化,通过调整镓(Ga)比例及分布控制CIGS薄膜的带隙,采用镓元素梯度分布,使CIGS薄膜带隙呈现抛物线状分布,电池的量子效率得到明显提高,制备出的CIGS薄膜电池开路电压与转换效率都得到很大程度的改善,电池最高转换效率已达9.4%.
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