在Si晶体中建立了60°位错偶极子模型并通过Parrinello-Rahman方法施加剪应力,使用分子动力学方法研究了60°位错在不同的温度和剪应力作用下的运动特性.观察到了位错速度与剪应力成正比关系;而温度对位错速度的影响,随着外加剪应力的不同呈现出三种趋势:(1) 低剪应力作用下,位错速度与温度成正比关系;(2)剪应力达到0.6GPa附近时,位错速度与温度呈反比关系,声子拖动效应开始起作用;(3)当剪应力达到2GPa时,位错速度稳定在某一特定值,不再明显随温度的变化而变化.
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