孪生对靶直流磁控溅射制备ZnO:Al薄膜及其特性研究

人工晶体学报, 2006, 35(4): 761-815. doi: 10.3969/j.issn.1000-985X.2006.04.021

孪生对靶直流磁控溅射制备ZnO:Al薄膜及其特性研究

李微 ^1, , 孙云 ^2, , 何青 ^3, , 刘芳芳 ^4, , 李凤岩 ^5,

1.南开大学光电子薄膜器件与技术研究所,天津,300071

2.天津市光电子薄膜器件与技术重点实验室,天津,300071

基金项目: 国家高技术研究发展计划(863计划)(2004AA513020)

Physical Properties of ZnO:Al Films by DC Magnetron Sputtering with Facing Targets

本文以ZnO:Al(ZAO)陶瓷为靶材,采用孪生对靶直流磁控溅射工艺在玻璃衬底上制备出高质量的铝掺杂氧化锌透明导电膜,研究了该薄膜的结构、光电及力学特性.采用孪生对靶制备ZAO薄膜可使样品避开等离子体直接轰击,减少基底薄膜的损伤.制备的薄膜具有结晶程度高、电阻率低、迁移率高等优点.ZAO薄膜的最低电阻率达到了4.47×10-4Ω·cm,在可见光区的平均透过率达到85%以上,非常适合做为铜铟硒(CIS)薄膜太阳电池窗口层.

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孪生对靶直流磁控溅射制备ZnO:Al薄膜及其特性研究

Physical Properties of ZnO:Al Films by DC Magnetron Sputtering with Facing Targets

参考文献