Cu(In,Ga)Se2薄膜电沉积制备及性能研究

人工晶体学报, 2006, 35(5): 1146-1150. doi: 10.3969/j.issn.1000-985X.2006.05.049

Cu(In,Ga)Se2薄膜电沉积制备及性能研究

夏冬林 ^1, , 徐慢 ^2, , 李建庄 ^3, , 赵修建 ^4,

1.武汉理工大学硅酸盐材料工程教育部重点实验室,武汉,430070

2.武汉理工大学硅酸盐材料工程教育部重点实验室,武汉,430070

3.武汉理工大学硅酸盐材料工程教育部重点实验室,武汉,430070

4.武汉理工大学硅酸盐材料工程教育部重点实验室,武汉,430070

基金项目: 武汉理工大学校科研和教改项目(2003XJJ025)

关键词： Cu(In,Ga)Se2(CIGS) , 薄膜 , 电沉积 , 太阳能电池

Study of Cu(In,Ga)Se2 Thin Films by the Electrodeposition

采用Mo/钠钙玻璃衬底作为阴极,饱和甘汞电极(SCE)为参比电极,大面积的铂网电极作为阳极的三电极体系,以氯化铜,三氯化铟,三氯化镓和亚硒酸的水溶液为电解液,利用电沉积技术制备出黄铜矿结构Cu(In,Ga)Se2多晶薄膜.研究了不同热处理温度对CIGS多晶薄膜材料的组成、结构和表面形貌的影响以及薄膜的光电学性能.实验结果表明当热处理温度为450℃时,所制备的Cu(In,Ga)Se2薄膜的化学组成接近理想的化学计量比,薄膜具有黄铜矿结构,颗粒均匀,致密性较好,在室温下禁带宽度为1.43 eV,具有高的吸收系数.

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Cu(In,Ga)Se2薄膜电沉积制备及性能研究

Study of Cu(In,Ga)Se2 Thin Films by the Electrodeposition

参考文献