应用射频反应磁控溅射的方法,将ZnO薄膜沉积于高磷掺杂的n+型Si衬底上.在沉积和后退火过程中,磷向ZnO薄膜扩散并被激活,使ZnO薄膜由n型转化为p型,从而形成p型ZnO薄膜.X射线衍射分析(XRD)证明了所制备的ZnO薄膜都是高c轴取向的六角纤锌矿结构的薄膜.电学I-V关系曲线的整流特性和空穴浓度≥1.78×1018 /cm3的霍耳效应测试结果证明了p型ZnO薄膜的形成.
参考文献
[1] | Park CH.;Zhang SB.;Wei SH. .Origin of p-type doping difficulty in ZnO: The impurity perspective - art. no. 073202[J].Physical Review.B.Condensed Matter,2002(7):3202-0. |
[2] | Minegishi K;Koiwai Y;Kikuchi Y et al.Growth of p-type Zinc Oxide Films by Chemical Vapor Deposition[J].Japanese Journal of Applied Physics,1997,36:L1453. |
[3] | Lu J G;Ye Z Z;Zhu ge F et al.p-type Conduction in N-Al Co-doped ZnO Thin Films[J].Applied Physics Letters,2004,85(15):3134. |
[4] | Joseph M;Tabata H;Kawai T .p-type Electrical Conduction in ZnO Thin Films by Ga and N co-doping[J].Japanese Journal of Applied Physics,1999,38:2505. |
[5] | Nause Jeff;Pan Ming;Rengarajan Varatharajan;Nemeth William,Ganesan Shanthi,Payne Adam,Li Nola,Ferguson Ian .ZnO Semiconductors for Lighting[J].Proceedings of Spie,2005,5941:70. |
[6] | Look D C;Renolds D C;Litton C W et al.Characterization of Homoepitaxial p-type ZnO Grown by Molecular Beam Epitaxy[J].Applied Physics Letters,2002,81(10):1830. |
[7] | Singh A V;Mefra R M;Wakaha A et al.p-type Conduction in Codoped ZnO Thin Films[J].Journal of Applied Physics,2003,3(12):396. |
[8] | Barnes TM;Olson K;Wolden CA .On the formation and stability of p-type conductivity in nitrogen-doped zinc oxide[J].Applied physics letters,2005(11):2112-1-2112-3-0. |
[9] | Realization of p-type ZnO thin films via phosphorus doping and thermal activation of the dopant[J].Applied physics letters,2003(1):63-65. |
[10] | Limpijumnong S;Zhang S B;Wei S H.Doping by Large-size-mismatched Impurities:The Microscopic Origin of Arsenic-or Antimonydoped p-type Zinc Oxide[J].Physical Review Letters,2004:92. |
[11] | Park Seong-Ju[OL].http://www.ifpanedupl/Ⅱ-Ⅵ2005/abstracts/i011pdf |
[12] | 周新翠,叶志镇,陈福刚,徐伟中,缪燕,黄靖云,吕建国,朱丽萍,赵炳辉.MOCVD法制备磷掺杂p型ZnO薄膜[J].半导体学报,2006(01):91-95. |
[13] | Wang P;Chen Nuofu;Yin Z G .P-dope p-type ZuO Films Deposited on Si Substrate bye Radio-frequency Magnetron Sputtering[J].Applied Physics Letters,2006,88:152102. |
[14] | Xu PS.;Sun YM.;Shi CS.;Xu FQ.;Pan HB. .The electronic structure and spectral properties of ZnO and its defects[J].Nuclear Instruments and Methods in Physics Research, Section B. Beam Interactions with Materials and Atoms,2003(0):286-290. |
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