采用基片曲率法设计和制作了一种测量薄膜应力的装置,它具有简单、无损伤、快速、易于操作、精度高的优点.使用该装置测量了射频磁控溅射镀制的Cu单层膜和Ag/Cu多层膜的应力,结果表明薄膜残余应力是均匀的,但随沉积条件不同而不同.Cu单层膜和Ag/Cu多层膜处于压应力状态,外加-200 V偏压时,Ag/Cu多层膜则转变为很小的拉应力状态.XRD表明Ag/Cu多层膜已结晶,呈现Ag(111)/Cu(111)择优取向.
参考文献
| [1] | Ohring M.The materials science of thin films[M].London:Academic Press Inc |
| [2] | 张定铨;何家文.材料中残余应力的X射线衍射分析和作用[M].西安:西安交通大学出版社,1999 |
| [3] | Sanjurjo J A;Lópcz Cruz E;Vogl P et al.Dependence on Volume of the Phonon Frequencies and the Infrared Effective Charges of Several Ⅲ-V Semiconductors[J].Physical Review B,1983,28(08):4579-4584. |
| [4] | Flinn P A;Gardner D S;Nix W D .Measurement and interpretation of stress in aluminum-based metallization as a function of thermal history[J].IEEE Transactions on Electron Devices,1987,ED34:689-699. |
| [5] | Brantiey W A .Calculated elastic constants for stress problems associated with semiconductor devices[J].Journal of Applied Physics,1973,44(01):534-535. |
| [6] | ZHANG Tong-jun,M.S.Wong,W.D.Sproul,Y.W.Chung.Characterization of magnetron sputtering TiB2 and Ti-B-N thin films[J].中国有色金属学会会刊,2000(05):619. |
| [7] | Rossnagel S M;Gilstrap P;Rujkorakarn R .Stress measurement in thin films by geometrical optics[J].Journal of Vacuum Science and Technology,1982,21(04):1045-1046. |
| [8] | 胡一贯;乐德芬;陈宁伟 .用激光干涉法分析薄膜应力[J].中国科学技术大学学报,1992,22(02):204-208. |
| [9] | Keller RM.;Arzt E.;Baker SP. .Stress-temperature behavior of unpassivated thin copper films[J].Acta materialia,1999(2):415-426. |
| [10] | D. WEISS;H. GAO;E. ARZT .CONSTRAINED DIFFUSIONAL CREEP IN UHV-PRODUCED COPPER THIN FILMS[J].Acta materialia,2001(13):2395-2403. |
| [11] | Shull AL.;Spaepen F. .MEASUREMENTS OF STRESS DURING VAPOR DEPOSITION OF COPPER AND SILVER THIN FILMS AND MULTILAYERS[J].Journal of Applied Physics,1996(11):6243-6256. |
| [12] | Abermann R .Measurements of the intrinsic stress in thin metal films[J].真空,1990,41:1279-1282. |
上一张
下一张
上一张
下一张
计量
- 下载量()
- 访问量()
文章评分
- 您的评分：
-
10%
-
20%
-
30%
-
40%
-
50%