采用常规的Sol-gel工艺合成了In3+掺杂的多孔SiO2干凝胶,In3+离子作为间隙离子存在于SiO2网络中,展示了一种新颖的发光现象,改变了多孔SiO2干凝胶的发射光谱.这种掺杂的多孔SiO2干凝胶的激发和发射光谱均由2个带组成,短波长的发光峰在440nm(λex＝380nm),其相对荧光强度约是未掺杂的多孔SiO2干凝胶的4倍;长波长的发光峰(In3+离子在多孔SiO2干凝胶的特征发射)在600nm(λex＝476nm),其相对荧光强度约是In3+掺杂ZnS纳米晶的10倍.由此可以看出:掺杂的多孔SiO2干凝胶是一种高效的发光材料.
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