综述了各种无机薄膜的基本制备方法,并对目前国内外的一些新的薄膜制备方法和应用的最新进展进行了概述,分别介绍了物理方法、化学方法及溶胶-凝胶法(Sol-gel)的基本特点及成膜特性,同时对今后薄膜制备领域的前景进行了展望.
参考文献
[1] | 王力衡.薄膜技术[M].北京:清华大学出版社,1991 |
[2] | 金原粲;杨希光.薄膜的基本技术[M].北京:科学出版社,1982 |
[3] | 刘衍余;裴桂芬;王苏平.化工百科全书[M].北京:化学工业出版社,1991 |
[4] | Penning F M .Physica(utrecht)3873(1936)[P].United Steates Patent 2146025,1939. |
[5] | Cary Lo;Krishnaswamy S V;Rao K R et al.Synthesis of iron-nitrogen compounds by R F sputtering[J].Materials Research Bulletin,1980,15(09):1267-1272. |
[6] | Vispute RD.;Budai JD.;Narayan J. .HIGH QUALITY OPTOELECTRONIC GRADE EPITAXIAL ALN FILMS ON ALPHA-AL2O3, SI AND 6H-SIC BY PULSED LASER DEPOSITION[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,1997(1/2):94-103. |
[7] | Voevodin A A;Capano M A;Safriet A J et al.Combined Magnetron Sputtering and pulsed laser depositon of carbides and diamond-like carbon films[J].Applied Physics Letters,1996,69(02):188-190. |
[8] | Laube SJP.;Korenyi-Both A.;Voevodin AA. .Cathodic arc titanium nitride in situ process feedback control for multi-layer deposition[J].Surface & Coatings Technology,1998(3):281-286. |
[9] | Schneider JM.;Voevodin AA.;Matthews A.;Sproul WD. .CRYSTALLINE ALUMINA DEPOSITED AT LOW TEMPERATURES BY IONIZED MAGNETRON SPUTTERING[J].Journal of Vacuum Science & Technology, A. Vacuum, Surfaces, and Films,1997(3 Pt.1):1084-1088. |
[10] | 杨邦朝;王文生.薄膜物理与技术[M].成都:电子科技大学出版社,1994:118-135. |
[11] | Simon T Y;Werner L .Alternative deposition processes for hydrogenated amorphous silicon and related alloys[J].Applied Physics Communications,1990,10(1-2):71-141. |
[12] | Redondas X;González P;León B et al.Structural and compositional studies of α-Si,CH thin films obtained by excimer lamp chemical vapor deposition from acetylene and silane[J].Journal of Vacuum Science and Technology A-Vacuum Surfaces and Films,1998,16(02):660-665. |
[13] | Kueppers D;Koenings J;Wilson H .Application of the plasma-activated chemical vapor deposition(PCVD)process to the preparation of fluorine doped fibres[J].NTG-Fachberichte,1977(59):12-14. |
[14] | Ong TP.;Venkatraman R.;Garcia S.;Jain A.;Sparks T. Farkas J.;Fernandes M.;Gall M.;Jawarani D.;Klein J.;Weitzman E. Kawasaki H.;Wu W.;Blumenthal R.;Pintchovski F.;Marsh R.;Zhang P. Zhang H.;Guo T.;Mosely R.;Fiordalice R. .Void-free chemically vapor-deposited aluminum dual inlaid metallization schemes for ultra-large-scale-integrated via and interconnect applications[J].Applied physics letters,1998(1):82-84. |
[15] | 贾宇明;郑昌琼;杨邦朝 等.掺硼金刚石膜的热敏特性[J].材料研究学报,1996,10(04):415-418. |
[16] | Susumu T;Eisuke N;Mitsuo N et al.Blanket tungsten film for mation by photo-enhanced and plasma-enhanced chemical vapor deposition[J].Proceedings-Electrochemical Society,1987(87):24-31. |
[17] | Potts J E;Smith T L;Cheng H et al.Electron-beam-pumped lasing in epitaxial ZnSe thin films[J].Journal of Crystal Growth,1987(86):935-941. |
[18] | Kamon K;Takagishi S;Mori H .Selective epitaxiai growth of GaAs by low-pressure OMVPE[J].Journal of Crystal Growth,1985,73(01):73-76. |
[19] | Seong Nak-jin;Choi Eun-suck;Yoon Soon-Gil .Ferroelectric SrBi2Ta2O9 thin film deposition at 550℃ by plasma-enhanced metalorganic chemical vapor deposition platinum bottom electrode[J].Journal of Vacuum Science and Technology A-Vacuum Surfaces and Films,1999,17(01):83-87. |
[20] | Chang KL.;Hsieh KC.;Wohlert DE.;Pickrell GW.;Cheng KY.;Chou LJ. .Formation of amorphous native oxides by very-low-temperature molecular beam epitaxy and water vapor oxidation[J].Journal of Crystal Growth,1999(0):633-637. |
[21] | Yoshinao K;Miho M;Akinori K et al.In situ gravimetrie monitoring halogen transport atomic layer epitaxy of cubic GaN[J].Applied Surface Science,2000,159-160:427-431. |
[22] | 卢旭晨;徐廷献 .溶胶-凝胶法及其应用[J].陶瓷学报,1998,19:53-57. |
[23] | Danson N.;Hall GW.;Howson RP.;Safi I. .Techniques for the sputtering of optimum indium-tin oxide films on to room-temperature substrates[J].Surface & Coatings Technology,1998(1/2):147-160. |
[24] | 郑家贵,张静全,蔡伟,黎兵,蔡亚平,冯良桓.ZnTe∶Cu薄膜的制备及其性能[J].半导体学报,2001(02):171-176. |
[25] | 杜新华,刘振祥,谢侃.CeO2/Nb2O5双层氧敏薄膜的制备及界面扩散研究[J].真空科学与技术学报,1999(03):159. |
[26] | 王世军,丁爱丽,仇萍荪,何夕云,罗维根.直流磁控反应溅射制备IrO2薄膜[J].无机材料学报,2000(04):733-739. |
[27] | 齐兵;何夕云;丁爱丽 等.水基溶胶—凝胶法制备Ba0 5Sr0 5TiO3薄膜及其介电性能研究[J].无机材料学报,1998,13(03):389-395. |
[28] | 童茂松,戴国瑞,薛辉,何秀丽,吴元大,高鼎三.溶胶-凝胶法制备V2O5薄膜的气敏特性研究[J].传感技术学报,2000(03):225-229. |
[29] | 张义华,王学勤,王祥生.纳米SnO2的制备及其气敏特性分析[J].传感器技术,1999(06):1. |
[30] | 赵鹏,张良莹,姚熹.溶胶-凝胶法制备LiCl/SiO2-Al2O3纳米复合薄膜的湿敏特性[J].硅酸盐通报,2000(01):39-42. |
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