以InCl3·4H2O为原料,经水解、胶溶、凝胶、煅烧得到了纳米级In2O3.利用XRD,TEM,TG-DTA等测试手段对纳米级In2O3的晶粒生长过程进行了研究.计算表明:随着煅烧温度的升高,平均晶粒度增大,而平均晶格畸变率则随着平均晶粒度的增大而减少.表明粒子越小,晶格畸变率越大,晶粒发育越不完整.应用相变理论计算得温度低于500℃煅烧1h,晶粒生长活化能为4.75kJ·mol-1,高于600℃时,晶粒生长活化能为66.40kJ·mol-1.TEM分析表明:加入适量形貌控制剂,可使颗粒的粒径和形貌得到很大改善.
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