报道了用CF4和氩气Ar作为工作气体的ECR反应离子刻蚀多晶硅(poly-Si)技术.研究了Ar气含量的变化对刻蚀速率和各向异性的影响,并对实验结果进行了分析.实验中气压为0.5Pa,混合气体中流量保持50sccm(1cm3/min standard cubic centimeter/minute),Ar气含量在0～50%范围内变化,对应的刻蚀速率在46～10sccm范围内.
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