为解决裸(SiC)P在应用中存在的不足,提出(SiC)P表面低成本化学改性的思路.采用简单的化学镀技术,改进氧化、亲水、敏化和活化的前处理工艺,对(SiC)P进行表面化学改性.确定了最佳的试验工艺,获得了镀层连续、无光滑(SiC)P裸露的较高质量的碳化硅复合粉体[简写为(Ni/SiC)P],通过SEM、EDS、XRD、TEM等测试,结果表明:改性后的(Ni/SiC)P较改性前的(SiC)P导电性有所提高,形貌、组成发生改变.同时分析了热处理对(Ni/SiC)P的影响,结果表明:随着温度的升高,(Ni/SiC)P表面改性层中的镍由非晶态转化为晶态.
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