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采用电沉积方法制备了ZnSe薄膜,研究了电沉积工艺参数,包括镀液的主盐离子浓度、配合剂浓度、pH值及电流密度等对膜层的影响.通过正交试验对上述各参数进行优化,以寻求最佳的工艺条件,得到最佳制备条件为:电流密度6.0mA/cm2,柠檬酸钠14.71g,pH值3.5,Zn2+/SeO2-3浓度比200:1,温度65℃,时间8min.在此条件下制备了薄膜样品,并用扫描电镜、EDAX能谱仪对镀层进行了表征,其结构均匀致密,Zn/Se化学计量比为1/1.01.

参考文献

[1] A. P. Samantilleke;I. M. Dharmadasa;K. L. Choy;J. Mei;R. Bacewicz;A. Wolska .Development of opto-electronic devices using electrochemically grown thin ZnSe layers[J].Journal of Materials Science. Materials in Electronics,2001(11):661-666.
[2] 赵红,何伟全.蓝绿光半导体光电子器件的研究与发展现状[J].半导体光电,2000(z1):1-4.
[3] R. Kumaresan;M. Ichimura;E. Arai .Photochemical deposition of ZnSe polycrystalline thin films and their characterization[J].Thin Solid Films: An International Journal on the Science and Technology of Thin and Thick Films,2002(1):25-30.
[4] Ennaoui A.;Lux-Steiner MC.;Riedl W.;Karg F.;Siebentritt S. .High-efficiency Cd-free CIGSS thin-film solar cells with solution grown zinc compound buffer layers[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,2001(1/4):31-40.
[5] Rumberg A.;Gerhard A.;Jager-Waldau A.;Lux-Steiner MC. .ZnSe buffer prepared by iodine-enhanced chemical vapour deposition for Cu(In,Ga)(Se,S)(2)-based solar cells[J].Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion,2003(1/2):1-8.
[6] Song JS.;Chang JH.;Hong SK.;Cho MW.;Makino H.;Hanada T.;Yao T. .Improvement in crystallinity of ZnSe by inserting a low-temperature buffer layer between the ZnSe epilayer and the GaAs substrate[J].Journal of Crystal Growth,2002(1/2):95-103.
[7] Chen W R;Chang S J;Su Y K et al.ZnSe epitaxial layers and ZnSSe/ZnSe strain layer superlattices grown by molecular beam epitaxy[J].Superlattices and Microstructures,2002,32:59-63.
[8] 郭爱波,刘玉萍,陈枫,李斌,但敏,刘明海,胡希伟.等离子体增强化学气相沉积制备的ZnO薄膜研究[J].表面技术,2006(06):5-7.
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