氧在溅射和退火过程中对ZnO薄膜的影响研究

表面技术 , 2009, 38(4): 23-25. doi: 10.3969/j.issn.1001-3660.2009.04.009

氧在溅射和退火过程中对ZnO薄膜的影响研究

徐芸芸 ^1, , 张韬 ^2, , 陈晰 ^3, , 徐新 ^4, , 李争鸣 ^5,

1.徐州空军学院,江苏,徐州,221008

2.徐州空军学院,江苏,徐州,221008

3.徐州空军学院,江苏,徐州,221008

4.徐州空军学院,江苏,徐州,221008

5.徐州空军学院,江苏,徐州,221008

关键词： ZnO薄膜 , XRD , 氧气 , 退火

Effect of Oxygen on ZnO Thin Film in Sputtered and Annealed State

利用射频磁控溅射技术在玻璃基片上制备了高度C轴择优取向的纳米ZnO薄膜,采用扫描电子显微镜、电子能谱仪和X射线衍射分析仪研究了溅射过程中和热处理过程中氧气对ZnO薄膜形貌、成分以及结构的影响规律.结果表明:在溅射过程中和退火过程中通入适量的氧气,ZnO薄膜(002)衍射面的晶面间距变小,薄膜中的氧含量提高,薄膜中的缺陷减少.在空气气氛中退火2h的薄膜,质量几乎接近了在溅射过程中通入氧气所制得的样品.因此在溅射制备ZnO薄膜时,可以减少氧气用量甚至无需通入氧气,而在热处理过程中实现增氧,从而降低了制备成本,简化了薄膜的制备工艺.

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氧在溅射和退火过程中对ZnO薄膜的影响研究

Effect of Oxygen on ZnO Thin Film in Sputtered and Annealed State

参考文献